Erratum: Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering (Journal of Applied Physics (2002) 91 (8096))

Yoshito Ashizawa; Shin Saito; Migaku Takahashi

doi:10.1063/1.1505649

Erratum: Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering (Journal of Applied Physics (2002) 91 (8096))

Yoshito Ashizawa, Shin Saito, Migaku Takahashi

ENG - Electronic Engineering

Tohoku University

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	3416
Number of pages	1
Journal	Journal of Applied Physics
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.1505649
Publication status	Published - 2002 Sept 15

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10.1063/1.1505649

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@article{71525dc0650a492ebfd658a9e948d93c,

title = "Erratum: Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering (Journal of Applied Physics (2002) 91 (8096))",

author = "Yoshito Ashizawa and Shin Saito and Migaku Takahashi",

year = "2002",

month = sep,

day = "15",

doi = "10.1063/1.1505649",

language = "English",

volume = "92",

pages = "3416",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Erratum

T2 - Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering (Journal of Applied Physics (2002) 91 (8096))

AU - Ashizawa, Yoshito

AU - Saito, Shin

AU - Takahashi, Migaku

PY - 2002/9/15

Y1 - 2002/9/15

UR - http://www.scopus.com/inward/record.url?scp=18644368711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18644368711&partnerID=8YFLogxK

U2 - 10.1063/1.1505649

DO - 10.1063/1.1505649

M3 - Comment/debate

AN - SCOPUS:18644368711

SN - 0021-8979

VL - 92

SP - 3416

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Erratum: Analysis of growing mechanism for MnSb epitaxial films fabricated on a Si substrate by dc sputtering (Journal of Applied Physics (2002) 91 (8096))

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