Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112))

Takashi Aratani; Masaaki Higuchi; Shigetoshi Sugawa; Eiji Ikenaga; Jiro Ushio; Hiroshi Nohira; Tomoyuki Suwa; Akinobu Teramoto; Tadahiro Ohimi; Takeo Hattori

doi:10.1063/1.3366705

Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si₃N₄/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112))

Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi Nohira, Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohimi, Takeo Hattori

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Comment/debate

1 Citation (Scopus)

Original language	English
Article number	069902
Journal	Journal of Applied Physics
Volume	107
Issue number	6
DOIs	https://doi.org/10.1063/1.3366705
Publication status	Published - 2010

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10.1063/1.3366705

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Aratani, T., Higuchi, M., Sugawa, S., Ikenaga, E., Ushio, J., Nohira, H., Suwa, T., Teramoto, A., Ohimi, T., & Hattori, T. (2010). Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si₃N₄/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112)). Journal of Applied Physics, 107(6), Article 069902. https://doi.org/10.1063/1.3366705

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title = "Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112))",

author = "Takashi Aratani and Masaaki Higuchi and Shigetoshi Sugawa and Eiji Ikenaga and Jiro Ushio and Hiroshi Nohira and Tomoyuki Suwa and Akinobu Teramoto and Tadahiro Ohimi and Takeo Hattori",

year = "2010",

doi = "10.1063/1.3366705",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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Aratani, T, Higuchi, M, Sugawa, S, Ikenaga, E, Ushio, J, Nohira, H, Suwa, T, Teramoto, A, Ohimi, T & Hattori, T 2010, 'Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si₃N₄/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112))', Journal of Applied Physics, vol. 107, no. 6, 069902. https://doi.org/10.1063/1.3366705

Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si₃N₄/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112)). / Aratani, Takashi; Higuchi, Masaaki; Sugawa, Shigetoshi et al.
In: Journal of Applied Physics, Vol. 107, No. 6, 069902, 2010.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Angle-resolved phototelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112))

AU - Aratani, Takashi

AU - Higuchi, Masaaki

AU - Sugawa, Shigetoshi

AU - Ikenaga, Eiji

AU - Ushio, Jiro

AU - Nohira, Hiroshi

AU - Suwa, Tomoyuki

AU - Teramoto, Akinobu

AU - Ohimi, Tadahiro

AU - Hattori, Takeo

PY - 2010

Y1 - 2010

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U2 - 10.1063/1.3366705

DO - 10.1063/1.3366705

M3 - Comment/debate

AN - SCOPUS:77950591696

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 069902

ER -

Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si3N4/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112))

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Erratum: Angle-resolved phototelectron study on the structures of silicon nitride films and Si₃N₄/Si interfaces formed using nitrogen-hydrogen radicals (Journal of Applied Physics (2008) 104 (114112))