Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu; K. Wada; J. Müllhäuser; O. Brandt; K. H. Ploog; T. Mizutani; A. Setoguchi; R. Nakai; M. Sugiyama; H. Nakanishi; K. Torii; T. Deguchi; T. Sota; S. Nakamura

doi:10.1063/1.1343504

Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

S. F. Chichibu, K. Wada, J. Müllhäuser, O. Brandt, K. H. Ploog, T. Mizutani, A. Setoguchi, R. Nakai, M. Sugiyama, H. Nakanishi, K. Torii, T. Deguchi, T. Sota, S. Nakamura

IMRAM - Division of Measurements

Research output: Contribution to journal › Comment/debate

3 Citations (Scopus)

Original language	English
Pages (from-to)	679
Number of pages	1
Journal	Applied Physics Letters
Volume	78
Issue number	5
DOIs	https://doi.org/10.1063/1.1343504
Publication status	Published - 2001 Jan 29

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Chichibu, S. F., Wada, K., Müllhäuser, J., Brandt, O., Ploog, K. H., Mizutani, T., Setoguchi, A., Nakai, R., Sugiyama, M., Nakanishi, H., Torii, K., Deguchi, T., Sota, T., & Nakamura, S. (2001). Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131)). Applied Physics Letters, 78(5), 679. https://doi.org/10.1063/1.1343504

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title = "Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))",

author = "Chichibu, {S. F.} and K. Wada and J. M{\"u}llh{\"a}user and O. Brandt and Ploog, {K. H.} and T. Mizutani and A. Setoguchi and R. Nakai and M. Sugiyama and H. Nakanishi and K. Torii and T. Deguchi and T. Sota and S. Nakamura",

year = "2001",

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Chichibu, SF, Wada, K, Müllhäuser, J, Brandt, O, Ploog, KH, Mizutani, T, Setoguchi, A, Nakai, R, Sugiyama, M, Nakanishi, H, Torii, K, Deguchi, T, Sota, T & Nakamura, S 2001, 'Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))', Applied Physics Letters, vol. 78, no. 5, pp. 679. https://doi.org/10.1063/1.1343504

TY - JOUR

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T2 - Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

AU - Chichibu, S. F.

AU - Wada, K.

AU - Müllhäuser, J.

AU - Brandt, O.

AU - Ploog, K. H.

AU - Mizutani, T.

AU - Setoguchi, A.

AU - Nakai, R.

AU - Sugiyama, M.

AU - Nakanishi, H.

AU - Torii, K.

AU - Deguchi, T.

AU - Sota, T.

AU - Nakamura, S.

PY - 2001/1/29

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U2 - 10.1063/1.1343504

DO - 10.1063/1.1343504

M3 - Comment/debate

AN - SCOPUS:84862352586

SN - 0003-6951

VL - 78

SP - 679

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Erratum: Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (Appl. Phys. Lett. (2000) 76 (1671) (10.1063/1.126131))

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