Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17))

Hyun Chul Kang; Roman Olac-Vaw; Hiromi Karasawa; Yu Miyamoto; Hiroyuki Handa; Tetsuya Suemitsu; Hirokazu Fukidome; Maki Suemitsu; Taiichi Otsuji

doi:10.1143/JJAP.49.079201

Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17))

Hyun Chul Kang, Roman Olac-Vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	792011
Number of pages	1
Journal	Japanese journal of applied physics
Volume	49
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.079201
Publication status	Published - 2010 Jul

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.49.079201

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Kang, H. C., Olac-Vaw, R., Karasawa, H., Miyamoto, Y., Handa, H., Suemitsu, T., Fukidome, H., Suemitsu, M., & Otsuji, T. (2010). Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17)). Japanese journal of applied physics, 49(7 PART 1), 792011. https://doi.org/10.1143/JJAP.49.079201

Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17)). / Kang, Hyun Chul; Olac-Vaw, Roman; Karasawa, Hiromi et al.
In: Japanese journal of applied physics, Vol. 49, No. 7 PART 1, 07.2010, p. 792011.

Research output: Contribution to journal › Comment/debate › peer-review

Kang, HC, Olac-Vaw, R, Karasawa, H, Miyamoto, Y, Handa, H, Suemitsu, T , Fukidome, H, Suemitsu, M & Otsuji, T 2010, 'Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17))', Japanese journal of applied physics, vol. 49, no. 7 PART 1, pp. 792011. https://doi.org/10.1143/JJAP.49.079201

Kang HC, Olac-Vaw R, Karasawa H, Miyamoto Y, Handa H, Suemitsu T et al. Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17)). Japanese journal of applied physics. 2010 Jul;49(7 PART 1):792011. doi: 10.1143/JJAP.49.079201

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Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17))

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