Erratum: Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane" (Applied Physics Letters (1992) 60 (489))

S. Chichibu; A. Iwai; S. Matsumoto; H. Higuchi

doi:10.1063/1.107447

Erratum: Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane" (Applied Physics Letters (1992) 60 (489))

S. Chichibu, A. Iwai, S. Matsumoto, H. Higuchi

IMRAM - Division of Measurements

Research output: Contribution to journal › Comment/debate

3 Citations (Scopus)

Original language	English
Pages (from-to)	2439
Number of pages	1
Journal	Applied Physics Letters
Volume	60
Issue number	19
DOIs	https://doi.org/10.1063/1.107447
Publication status	Published - 1992

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10.1063/1.107447

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title = "Erratum: Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane{"} (Applied Physics Letters (1992) 60 (489))",

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Erratum: Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane" (Applied Physics Letters (1992) 60 (489))

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