TY - JOUR
T1 - Erratum
T2 - Influence of oxygen concentration of SI wafer surface in SI emission on Nano ordered three-dimensional structure devices (E-Journal of Surface Science and Nanotechnology (2018) 15 (127-134) DOI: 10.1380/ejssnt.2017.127)
AU - Fukuda, Etsuo
AU - Endoh, Tetsuo
AU - Ishikawa, Takashi
AU - Izunome, Koji
AU - Kamijo, Kazutaka
AU - Miyashita, Moriya
AU - Sakamoto, Takao
AU - Kageshima, Hiroyuki
N1 - Funding Information:
In STEM analysis, we would like to thank you Professor Konno and Professor Nishijima Metal Materials Research Institute Tohoku University for taking care of us. This work was supported by ACCEL project, “Three-Dimensional Integrated Circuits Technology Based on Vertical BC-MOSFETs and Its Advanced Application Exploration (PL: Tetsuo Endoh, PM: Toru Masaoka)” under Japan Science and Technology Agency.
Publisher Copyright:
© 2018 The Japan Society of Vacuum and Surface Science.
PY - 2018/8/25
Y1 - 2018/8/25
N2 - The publisher would like to apologize for errors that occurred in the article [1] published on 14 December, 2017. Captions of Fig. 5 and Tables I, II, and III are inappropriate. The captions should be corrected as follows: FIG. 5. Pillar cross-sectional structure images (a) before oxidation and (b) after oxidation. (c) An actual cross-sectional shape of the pillar after oxidation. TABLE I. Experimental parameter list. TABLE II. Oxidation temperature dependent experimental parameters. TABLE III. Comparison of difference between high and low oxygen concentration wafer. Another correction is that “Fig. 9” which appears at the end of Sec. IV C. (p. 132) should read as “Fig. 10”. The publisher takes full responsibility for these errors.
AB - The publisher would like to apologize for errors that occurred in the article [1] published on 14 December, 2017. Captions of Fig. 5 and Tables I, II, and III are inappropriate. The captions should be corrected as follows: FIG. 5. Pillar cross-sectional structure images (a) before oxidation and (b) after oxidation. (c) An actual cross-sectional shape of the pillar after oxidation. TABLE I. Experimental parameter list. TABLE II. Oxidation temperature dependent experimental parameters. TABLE III. Comparison of difference between high and low oxygen concentration wafer. Another correction is that “Fig. 9” which appears at the end of Sec. IV C. (p. 132) should read as “Fig. 10”. The publisher takes full responsibility for these errors.
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U2 - 10.1380/ejssnt.2018.375
DO - 10.1380/ejssnt.2018.375
M3 - Comment/debate
AN - SCOPUS:85052987970
SN - 1348-0391
VL - 16
SP - 375
JO - e-Journal of Surface Science and Nanotechnology
JF - e-Journal of Surface Science and Nanotechnology
ER -