Erratum: Preparation, thermoelectric properties, and crystal structure of boron-doped Mg₂Si single crystals (AIP Advances (2020) 10 (035115) DOI: 10.1063/1.5143839)

Mg/B occupancy (occ.) in Table II of the original article1 was not correct. This erratum presents the corrected version of Table II. The B occ. should be half of the B-doping concentration x. Thus, the Mg/B occ. for x = 0.25%, 0.50%, and 0.75% should read 99.875/0.125, 99.75/0.25, and 99.625/0.375, respectively. Using these values, we perform single-crystal structural refinement. As a result, the Si occ. for x = 0.50% and 0.75% is slightly changed by +0.3%. The other changes are isotropic atomic displacement parameters (Uiso) for x = 0.75%: the difference is only +0.0001 2. These changes are minor and do not affect the original conclusion that the Si vacancy tends to increase with increasing x.