Erratum: Reduction of efficiency droop in semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105))

Ching Hsueh Chiu; Da Wei Lin; Chien Chung Lin; Zhen Yu Li; Wei Ting Chang; Hung Wen Hsu; Hao Chung Kuo; Tien Chang Lu; Shing Chung Wang; Wei Tsai Liao; Tomoyuki Tanikawa; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki

doi:10.1143/APEX.4.039201

Erratum: Reduction of efficiency droop in semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105))

Ching Hsueh Chiu, Da Wei Lin, Chien Chung Lin, Zhen Yu Li, Wei Ting Chang, Hung Wen Hsu, Hao Chung Kuo, Tien Chang Lu, Shing Chung Wang, Wei Tsai Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Materials Design Division

Research output: Contribution to journal › Comment/debate › peer-review

1 Citation (Scopus)

Original language	English
Article number	039201
Journal	Applied Physics Express
Volume	4
Issue number	3
DOIs	https://doi.org/10.1143/APEX.4.039201
Publication status	Published - 2011 Mar

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/APEX.4.039201

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Chiu, C. H., Lin, D. W., Lin, C. C., Li, Z. Y., Chang, W. T., Hsu, H. W., Kuo, H. C., Lu, T. C., Wang, S. C., Liao, W. T., Tanikawa, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2011). Erratum: Reduction of efficiency droop in semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105)). Applied Physics Express, 4(3), [039201]. https://doi.org/10.1143/APEX.4.039201

Chiu, CH, Lin, DW, Lin, CC, Li, ZY, Chang, WT, Hsu, HW, Kuo, HC, Lu, TC, Wang, SC, Liao, WT, Tanikawa, T, Honda, Y, Yamaguchi, M & Sawaki, N 2011, 'Erratum: Reduction of efficiency droop in semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105))', Applied Physics Express, vol. 4, no. 3, 039201. https://doi.org/10.1143/APEX.4.039201

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title = "Erratum: Reduction of efficiency droop in semipolar (1{\=1}01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105))",

author = "Chiu, {Ching Hsueh} and Lin, {Da Wei} and Lin, {Chien Chung} and Li, {Zhen Yu} and Chang, {Wei Ting} and Hsu, {Hung Wen} and Kuo, {Hao Chung} and Lu, {Tien Chang} and Wang, {Shing Chung} and Liao, {Wei Tsai} and Tomoyuki Tanikawa and Yoshio Honda and Masahito Yamaguchi and Nobuhiko Sawaki",

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T2 - Reduction of efficiency droop in semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105))

AU - Chiu, Ching Hsueh

AU - Lin, Da Wei

AU - Lin, Chien Chung

AU - Li, Zhen Yu

AU - Chang, Wei Ting

AU - Hsu, Hung Wen

AU - Kuo, Hao Chung

AU - Lu, Tien Chang

AU - Wang, Shing Chung

AU - Liao, Wei Tsai

AU - Tanikawa, Tomoyuki

AU - Honda, Yoshio

AU - Yamaguchi, Masahito

AU - Sawaki, Nobuhiko

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Erratum: Reduction of efficiency droop in semipolar (11̄01) InGaN/GaN light emitting diodes grown on patterned silicon substrates (Applied Physics Express (2011) 4 (012105))

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