Erratum: Strain relaxation mechanism of InGaN thin film grown on m-GaN [Phys. Status Solidi C 8, 444-446 (2011)]

Takashi Hanada; Taka aki Shimada; Shi Yang Ji; Kenji Hobo; Yuhuai Liu; Takashi Matsuoka

doi:10.1002/pssc.201270001

Erratum: Strain relaxation mechanism of InGaN thin film grown on m-GaN [Phys. Status Solidi C 8, 444-446 (2011)]

Takashi Hanada, Taka aki Shimada, Shi Yang Ji, Kenji Hobo, Yuhuai Liu, Takashi Matsuoka

Materials Design Division

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

The signs of the off-angle toward +c-direction of the miscut m-GaN substrates indicated in Figs. 1 and 2 and in the text should be reversed.

Original language	English
Pages (from-to)	1856
Number of pages	1
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	9
Issue number	8-9
DOIs	https://doi.org/10.1002/pssc.201270001
Publication status	Published - 2012 Aug

Keywords

InGaN
Misfit dislocation
Strain relaxation
m-plane

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201270001

Cite this

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title = "Erratum: Strain relaxation mechanism of InGaN thin film grown on m-GaN [Phys. Status Solidi C 8, 444-446 (2011)]",

abstract = "The signs of the off-angle toward +c-direction of the miscut m-GaN substrates indicated in Figs. 1 and 2 and in the text should be reversed.",

keywords = "InGaN, Misfit dislocation, Strain relaxation, m-plane",

author = "Takashi Hanada and Shimada, {Taka aki} and Ji, {Shi Yang} and Kenji Hobo and Yuhuai Liu and Takashi Matsuoka",

year = "2012",

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doi = "10.1002/pssc.201270001",

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T2 - Strain relaxation mechanism of InGaN thin film grown on m-GaN [Phys. Status Solidi C 8, 444-446 (2011)]

AU - Hanada, Takashi

AU - Shimada, Taka aki

AU - Ji, Shi Yang

AU - Hobo, Kenji

AU - Liu, Yuhuai

AU - Matsuoka, Takashi

PY - 2012/8

Y1 - 2012/8

N2 - The signs of the off-angle toward +c-direction of the miscut m-GaN substrates indicated in Figs. 1 and 2 and in the text should be reversed.

AB - The signs of the off-angle toward +c-direction of the miscut m-GaN substrates indicated in Figs. 1 and 2 and in the text should be reversed.

KW - InGaN

KW - Misfit dislocation

KW - Strain relaxation

KW - m-plane

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

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Erratum: Strain relaxation mechanism of InGaN thin film grown on m-GaN [Phys. Status Solidi C 8, 444-446 (2011)]

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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