TY - JOUR
T1 - ESR study of Mn doped II-VI and III-V DMS
AU - Nojiri, H.
AU - Motokawa, M.
AU - Takeyama, S.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
This work was partially supported by a Grant-in-Aid for Scientific Research on the Priority Area “Spin Controlled Semiconductor Nanostructures” from the Ministry of Education, Science, Sports and Culture.
PY - 1998/12/2
Y1 - 1998/12/2
N2 - We have measured the submillimeter wave ESR of II-VI and III-V semiconductors doped with Mn ions to study their electronic states. In Cd0.65Mn0.35Te, a crossover from the broadened ESR absorption to an ordinal easy-plane type antiferromagnetic resonance has been observed around 13 T. This crossover field gives the measure of the distribution of the exchange fields in the spinglass state. On the other hand, a ferromagnetic resonance has been observed in Ga1-xMnxAS(x = 0.029, 0.034). The g-value has been determined as g = 2.0 which corresponds to the Mn2+ ions. The saturation magnetization has also been estimated and considerable reduction was found.
AB - We have measured the submillimeter wave ESR of II-VI and III-V semiconductors doped with Mn ions to study their electronic states. In Cd0.65Mn0.35Te, a crossover from the broadened ESR absorption to an ordinal easy-plane type antiferromagnetic resonance has been observed around 13 T. This crossover field gives the measure of the distribution of the exchange fields in the spinglass state. On the other hand, a ferromagnetic resonance has been observed in Ga1-xMnxAS(x = 0.029, 0.034). The g-value has been determined as g = 2.0 which corresponds to the Mn2+ ions. The saturation magnetization has also been estimated and considerable reduction was found.
KW - CdMnTe
KW - Diluted magnetic semiconductor
KW - ESR
KW - GaMnAs
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U2 - 10.1016/S0921-4526(98)00504-3
DO - 10.1016/S0921-4526(98)00504-3
M3 - Article
AN - SCOPUS:18544407441
SN - 0921-4526
VL - 256-258
SP - 569
EP - 572
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -