Abstract
A method is proposed for semi-quantitative determination of the thickness or composition of a covering layer on a solid by XPS or by micro-AES using neither a series of standard samples nor argon-ion etching. In the case of XPS, the thickness or relative composition of the covering layer is calculated by means of the intensity ratio between one element and another in a specimen and using physical parameters such as inelastic mean free paths of electrons and photoionization cross-sections. In the case of AES, the physical parameters for the quantification can be eliminated by using the ratio of the relative intensity for two elements in the sample to that in a suitable, comparable reference.
Original language | English |
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Pages (from-to) | 243-253 |
Number of pages | 11 |
Journal | Journal of Electron Spectroscopy and Related Phenomena |
Volume | 24 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1981 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Radiation
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Spectroscopy
- Physical and Theoretical Chemistry