Evaluating the performance of a MOSFET dosimeter at diagnostic X-ray energies for interventional radiology

Koichi Chida, Youhei Inaba, Hanako Masuyama, Isao Yanagawa, Issei Mori, Haruo Saito, Shin Maruoka, Masayuki Zuguchi

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


For reducing the risk of skin injury during interventional radiology (IR) procedures, it has been suggested that physicians track patients' exposure doses. The metal-oxide semiconductor field effect transistor (MOSFET) dosimeter is designed to measure patient exposure dose during radiotherapy applications at megavoltage photon energies. Our purpose in this study was to evaluate the feasibility of using a MOSFET dosimeter (OneDose system) to measure patients' skin dose during exposure to diagnostic X-ray energies used in IR. The response of the OneDose system was almost constant at diagnostic X-ray energies, although the sensitivity was higher than that at megavoltage photon energies. We found that the angular dependence was minimal at diagnostic X-ray energies. The OneDose is almost invisible on X-ray images at diagnostic energies. Furthermore, the OneDose is easy to handle. The OneDose sensor performs well at diagnostic X-ray energies, although real-time measurements are not feasible. Thus, the OneDose system may prove useful in measuring patient exposure dose during IR.

Original languageEnglish
Pages (from-to)58-61
Number of pages4
JournalRadiological Physics and Technology
Issue number1
Publication statusPublished - 2009 Jan


  • Exposure dose
  • Interventional radiology
  • Metal-oxide semiconductor field effect transistor (MOSFET)
  • Radiation dosimetry
  • Radiation injury


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