TY - JOUR
T1 - Evaluation and selection of linbo3 and litao3 substrates for saw devices by the lfb ultrasonic material characterization system
AU - Kushibiki, Jun Ichi
AU - Ohashi, Yuji
AU - Ono, Yuu
N1 - Funding Information:
Manuscript received December 29, 1999; accepted February 11, 2000. This work was supported in part by Research Grants-in-Aid from the Ministry of Education, Science and Culture of Japan, from the Japan Society for the Promotion of Science for the Research for the Future Program, and from the Mitsubishi Foundation.
PY - 2000/7
Y1 - 2000/7
N2 - This paper demonstrates the evaluation and selection of commercially available LiNbOa and LiTaOa single crystals and wafers for surface acoustic wave (SAW) devices using the line-focus-beam ultrasonic material characterization (LFB-UMC) system. This system enables measuring leaky-SAW (LSAW) propagation characteristics precisely and efficiently for a number of specimens. The wafers are prepared from the top, middle, and bottom parts of four 128°YX LiNbOn and seven X-112°Y LiTaOs single crystals. For both series of crystals, the measured LSAW velocities increase from top to bottom in the crystals arid with the increasing crystal growth number. The velocity changes for all wafers are 0.036% for 128°YX LiNbOa and 0,035% for X-112°Y LiTaO3, corresponding to changes of 0.038 mol% and 0.075 mol% in LiO concentration, respectively. Moreover, the inhomogeneity in the first X-112°Y LiTaOs single crystal caused by some undesirable wafer fabrication processes can be detected precisely, although it is difficult for the conventional methods to obtain such information.
AB - This paper demonstrates the evaluation and selection of commercially available LiNbOa and LiTaOa single crystals and wafers for surface acoustic wave (SAW) devices using the line-focus-beam ultrasonic material characterization (LFB-UMC) system. This system enables measuring leaky-SAW (LSAW) propagation characteristics precisely and efficiently for a number of specimens. The wafers are prepared from the top, middle, and bottom parts of four 128°YX LiNbOn and seven X-112°Y LiTaOs single crystals. For both series of crystals, the measured LSAW velocities increase from top to bottom in the crystals arid with the increasing crystal growth number. The velocity changes for all wafers are 0.036% for 128°YX LiNbOa and 0,035% for X-112°Y LiTaO3, corresponding to changes of 0.038 mol% and 0.075 mol% in LiO concentration, respectively. Moreover, the inhomogeneity in the first X-112°Y LiTaOs single crystal caused by some undesirable wafer fabrication processes can be detected precisely, although it is difficult for the conventional methods to obtain such information.
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U2 - 10.1109/58.852091
DO - 10.1109/58.852091
M3 - Article
AN - SCOPUS:0034228746
SN - 0885-3010
VL - 47
SP - 1068
EP - 1076
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 4
ER -