Evaluation of bit error rate for ferroelectric data storage

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Bit data was recorded on a LiTaO3 single-crystal medium using a data storage system which was based on scanning nonlinear dielectric microscopy, and bit error rate was evaluated. The recording medium with a highly homogeneous thickness of 119 nm was prepared employing both polarization controlled wet etching and dry etching techniques. A 256 × 256 data bit array was recorded at an areal density of 258 Gbit/inch2. The bit error rate was determined to be 1.2 × 10-3 by visual inspection. An automated analysis method was subsequently discussed in detail.

Original languageEnglish
Pages (from-to)6632-6634
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number9 B
Publication statusPublished - 2004 Sept


  • Bit error rate
  • Ferroelectric data storage
  • LiTaO
  • Scanning nonlinear dielectric microscopy


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