Abstract
Bit data was recorded on a LiTaO3 single-crystal medium using a data storage system which was based on scanning nonlinear dielectric microscopy, and bit error rate was evaluated. The recording medium with a highly homogeneous thickness of 119 nm was prepared employing both polarization controlled wet etching and dry etching techniques. A 256 × 256 data bit array was recorded at an areal density of 258 Gbit/inch2. The bit error rate was determined to be 1.2 × 10-3 by visual inspection. An automated analysis method was subsequently discussed in detail.
Original language | English |
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Pages (from-to) | 6632-6634 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 43 |
Issue number | 9 B |
DOIs | |
Publication status | Published - 2004 Sept |
Keywords
- Bit error rate
- Ferroelectric data storage
- LiTaO
- Scanning nonlinear dielectric microscopy