Evaluation of crystalline silicon solar cells by current-modulating four-point-probe method

Wugen Pan; Kozo Fujiwara; Satoshi Uda

doi:10.1063/1.4816783

Evaluation of crystalline silicon solar cells by current-modulating four-point-probe method

Wugen Pan, Kozo Fujiwara, Satoshi Uda

Tohoku University

Research output: Contribution to journal › Article › peer-review

Abstract

A current-modulating four-point-probe method (CMR) is proposed as a method to determine the conversion efficiency of crystalline Si solar cells. This technique was implemented based on the comprehensive consideration of multiple problems or factors that are present in crystalline Si wafers and the subsequent thermal processes during solar cell fabrication, rather than employ conventional lifetime mapping or diffusion length mapping. A single parameter measurement of I_th-I_s from the CMR method reflects the effective resistivity or minority carriers of an entire wafer, to quickly characterize the quality or conversion efficiency of all kinds of crystalline Si.

Original language	English
Article number	043903
Journal	Applied Physics Letters
Volume	103
Issue number	4
DOIs	https://doi.org/10.1063/1.4816783
Publication status	Published - 2013 Jul 22

Access to Document

10.1063/1.4816783

Cite this

@article{fea62fc5978046668cd99dee13909908,

title = "Evaluation of crystalline silicon solar cells by current-modulating four-point-probe method",

abstract = "A current-modulating four-point-probe method (CMR) is proposed as a method to determine the conversion efficiency of crystalline Si solar cells. This technique was implemented based on the comprehensive consideration of multiple problems or factors that are present in crystalline Si wafers and the subsequent thermal processes during solar cell fabrication, rather than employ conventional lifetime mapping or diffusion length mapping. A single parameter measurement of Ith-Is from the CMR method reflects the effective resistivity or minority carriers of an entire wafer, to quickly characterize the quality or conversion efficiency of all kinds of crystalline Si.",

author = "Wugen Pan and Kozo Fujiwara and Satoshi Uda",

note = "Funding Information: We greatly appreciate the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers”, GR0016, for offering the opportunity to announce this invention, Professor N. Usami, Institute for Materials Research, Tohoku University, and the New Energy and Industrial Technology Development Organization (NEDO), for their financial supports.",

year = "2013",

month = jul,

day = "22",

doi = "10.1063/1.4816783",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Evaluation of crystalline silicon solar cells by current-modulating four-point-probe method

AU - Pan, Wugen

AU - Fujiwara, Kozo

AU - Uda, Satoshi

N1 - Funding Information: We greatly appreciate the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers”, GR0016, for offering the opportunity to announce this invention, Professor N. Usami, Institute for Materials Research, Tohoku University, and the New Energy and Industrial Technology Development Organization (NEDO), for their financial supports.

PY - 2013/7/22

Y1 - 2013/7/22

N2 - A current-modulating four-point-probe method (CMR) is proposed as a method to determine the conversion efficiency of crystalline Si solar cells. This technique was implemented based on the comprehensive consideration of multiple problems or factors that are present in crystalline Si wafers and the subsequent thermal processes during solar cell fabrication, rather than employ conventional lifetime mapping or diffusion length mapping. A single parameter measurement of Ith-Is from the CMR method reflects the effective resistivity or minority carriers of an entire wafer, to quickly characterize the quality or conversion efficiency of all kinds of crystalline Si.

AB - A current-modulating four-point-probe method (CMR) is proposed as a method to determine the conversion efficiency of crystalline Si solar cells. This technique was implemented based on the comprehensive consideration of multiple problems or factors that are present in crystalline Si wafers and the subsequent thermal processes during solar cell fabrication, rather than employ conventional lifetime mapping or diffusion length mapping. A single parameter measurement of Ith-Is from the CMR method reflects the effective resistivity or minority carriers of an entire wafer, to quickly characterize the quality or conversion efficiency of all kinds of crystalline Si.

UR - http://www.scopus.com/inward/record.url?scp=84884992729&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884992729&partnerID=8YFLogxK

U2 - 10.1063/1.4816783

DO - 10.1063/1.4816783

M3 - Article

AN - SCOPUS:84884992729

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043903

ER -

Evaluation of crystalline silicon solar cells by current-modulating four-point-probe method

Abstract

Access to Document

Other files and links

Fingerprint

Cite this