High frequency characteristics of any layer interstitial via hole (ALIVH) substrate have been evaluated for an application to the RF modules on 60GHz. A dielectric constant and loss tangent up to 60GHz was measured using strip line resonator designed on the ALIVH substrate. Measured dielectric constant 3.85-3.47 and loss tangent of 0.032-0.043 were almost constant from 2.5GHz to 60GHz. Equivalent lumped component circuit of via hole was modeled from measurement of frequency of strip line resonator with via hole. T-type LC circuit was employed for the circuit The evaluated inductance was 0.090-0.128 nH and capacitance was 0.129-0.195 pF. It was confirmed that the high frequency characteristics of ALIVH were sufficient for the application to RF module and 3-D SiP with no critical degradation.