Abstract
The hydrogenation effect in Poly-Si TFT was evaluated by using the charge pumping method for the first time. The generation-recombination current through the grain boundary traps is measured as the charge pumping current. Consequently, the grain boundary trap properties could be directly evaluated. It was found that the grain boundary trap density is reduced to around one fourth by the hydrogenation treatment for 8 hours in poly-Si TFTs fabricated by the high temperature process. The grain boundary traps have the tendency of increasing densities approaching the energy band edge. In poly-Si TFTs fabricated by the low temperature process, a considerably high trap density still remained even after 8 hour hydrogenation treatment.
| Original language | English |
|---|---|
| Pages | 593-595 |
| Number of pages | 3 |
| Publication status | Published - 1991 Jan 1 |
| Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29 |
Other
| Other | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
|---|---|
| City | Yokohama, Jpn |
| Period | 91/8/27 → 91/8/29 |
ASJC Scopus subject areas
- Engineering(all)