Evaluation of junction parameters with control of carrier concentration in Bi2Sr2CaCu2O 8+δ stacked junctions

K. Inomata; S. Sato; K. Nakajima; S. J. Kim; T. Hatano; Y. Takano; M. Nagao; T. Yamashita

doi:10.1016/j.physc.2003.12.102

Evaluation of junction parameters with control of carrier concentration in Bi₂Sr₂CaCu₂O _8+δ stacked junctions

K. Inomata, S. Sato, K. Nakajima, S. J. Kim, T. Hatano, Y. Takano, M. Nagao, T. Yamashita

RIEC - Computing System Platforms Division

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The control of the critical current density (J_C) and the junction resistance (R_N) along the c axis of intrinsic Josephson junctions (IJJs) on a high-T_C superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J_C, R_N, and the carrier concentration in Bi₂Sr₂CaCu ₂O_8+δ whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the J_C increased, and the R_N decreased systematically when the carrier concentration increased. The values of J_C and R_N could be controlled by a change in the carrier concentration.

Original language	English
Pages (from-to)	1396-1400
Number of pages	5
Journal	Physica C: Superconductivity and its Applications
Volume	412-414
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physc.2003.12.102
Publication status	Published - 2004 Oct

Keywords

Carrier concentration
Intrinsic Josephson junctions
Whisker

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10.1016/j.physc.2003.12.102

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title = "Evaluation of junction parameters with control of carrier concentration in Bi2Sr2CaCu2O 8+δ stacked junctions",

abstract = "The control of the critical current density (JC) and the junction resistance (RN) along the c axis of intrinsic Josephson junctions (IJJs) on a high-TC superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of JC, RN, and the carrier concentration in Bi2Sr2CaCu 2O8+δ whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the JC increased, and the RN decreased systematically when the carrier concentration increased. The values of JC and RN could be controlled by a change in the carrier concentration.",

keywords = "Carrier concentration, Intrinsic Josephson junctions, Whisker",

author = "K. Inomata and S. Sato and K. Nakajima and Kim, {S. J.} and T. Hatano and Y. Takano and M. Nagao and T. Yamashita",

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volume = "412-414",

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T1 - Evaluation of junction parameters with control of carrier concentration in Bi2Sr2CaCu2O 8+δ stacked junctions

AU - Inomata, K.

AU - Sato, S.

AU - Nakajima, K.

AU - Kim, S. J.

AU - Hatano, T.

AU - Takano, Y.

AU - Nagao, M.

AU - Yamashita, T.

PY - 2004/10

Y1 - 2004/10

N2 - The control of the critical current density (JC) and the junction resistance (RN) along the c axis of intrinsic Josephson junctions (IJJs) on a high-TC superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of JC, RN, and the carrier concentration in Bi2Sr2CaCu 2O8+δ whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the JC increased, and the RN decreased systematically when the carrier concentration increased. The values of JC and RN could be controlled by a change in the carrier concentration.

AB - The control of the critical current density (JC) and the junction resistance (RN) along the c axis of intrinsic Josephson junctions (IJJs) on a high-TC superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of JC, RN, and the carrier concentration in Bi2Sr2CaCu 2O8+δ whiskers by changing the carrier concentration with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the JC increased, and the RN decreased systematically when the carrier concentration increased. The values of JC and RN could be controlled by a change in the carrier concentration.

KW - Carrier concentration

KW - Intrinsic Josephson junctions

KW - Whisker

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JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

IS - SPEC. ISS.

ER -

Evaluation of junction parameters with control of carrier concentration in Bi₂Sr₂CaCu₂O _8+δ stacked junctions

Abstract

Keywords

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