Evaluation of narrow gap filling ability in shallow trench isolation by organosiloxane sol-gel precursor

Kohei Watanuki, Atsutoshi Inokuchi, Akinori Banba, Nobuyuki Manabe, Hirokazu Suzuki, Tadashi Koike, Tatsuhiko Adachi, Tetsuya Goto, Akinobu Teramoto, Yasuyuki Shirai, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)


High quality SiO2 film formation in the narrow trench pattern is important for many applications such as large scale integration (LSI) circuit and micro electro mechanical system (MEMS) industry. We have evaluated the process conditions, electrical properties, structural characteristics, and gap filling abilities of SiO2 film using organosiloxane-based silica sol-gel precursor derived from the mixture of tetraethoxysilane (TEOS) and methyltrimethoxysilane (MTMS) by changing the molar ratio of TEOS/MTMS. This sol-gel precursor was converted to high quality SiO2 film by optimizing baking conditions. The SiO2 film from this sol-gel precursor has excellent dielectric characteristics of low leakage current density and high breakdown voltage whose values are comparable to those of thermal oxide SiO2 film. In addition, the breakdown field intensity of these films was improved by adding a small amount of metal oxide such as TiO2, HfO2, and ZrO2. Furthermore, by introducing the optimum pressure (<26666 Pa) in the oxidation baking process, the film has excellent surface planarization and uniformly gap filling abilities of narrow trench pattern without void formation

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
PublisherElectrochemical Society Inc.
Number of pages9
ISBN (Electronic)9781607681724
ISBN (Print)9781566778220
Publication statusPublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


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