TY - GEN
T1 - Evaluation of piezoresistive property of vanadium oxide thin film
AU - Inomata, Naoki
AU - Van Toan, Nguyen
AU - Toda, Masaya
AU - Ono, Takahito
PY - 2018/4/24
Y1 - 2018/4/24
N2 - This paper shows the evaluation of piezpresistive property of a vanadium oxide (VOx) film. The VOx film is deposited and patterned as a piezoresistor on an edge of suspended silicon (Si) membrane. The VOx resistor, electrode pads connected to the resistor, and the suspended membrane structure are fabricated using conventional microfabrication techniques. The resistance of the VOx resistor changes as the membrane is deflected. The deflection of the membrane is caused by evacuating to each differential pressure (from -0.02 to -0.05 by -0.01 MPa), and measured using a white-light interferometer. The resistance decreases as the strain is increased. The gauge factor of the deposited VOx is 259, which value is higher than general semiconductor materials such as Si. The feasibility of VOx as a focusing material for MEMS/NEMS application (ex. strain gauge) is indicated by our experiment.
AB - This paper shows the evaluation of piezpresistive property of a vanadium oxide (VOx) film. The VOx film is deposited and patterned as a piezoresistor on an edge of suspended silicon (Si) membrane. The VOx resistor, electrode pads connected to the resistor, and the suspended membrane structure are fabricated using conventional microfabrication techniques. The resistance of the VOx resistor changes as the membrane is deflected. The deflection of the membrane is caused by evacuating to each differential pressure (from -0.02 to -0.05 by -0.01 MPa), and measured using a white-light interferometer. The resistance decreases as the strain is increased. The gauge factor of the deposited VOx is 259, which value is higher than general semiconductor materials such as Si. The feasibility of VOx as a focusing material for MEMS/NEMS application (ex. strain gauge) is indicated by our experiment.
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U2 - 10.1109/MEMSYS.2018.8346738
DO - 10.1109/MEMSYS.2018.8346738
M3 - Conference contribution
AN - SCOPUS:85047005137
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 1044
EP - 1047
BT - 2018 IEEE Micro Electro Mechanical Systems, MEMS 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018
Y2 - 21 January 2018 through 25 January 2018
ER -