Evaluation techniques for semiconductor devices are keys for device development with low cost and short time to market. Especially, dopant and depletion layer distribution in devices is a critical electrical property that needs to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We developed a method for imaging detailed dopant distribution and depletion layers in semiconductor devices using SHO-SNDM. As a demonstration, a cross-section of a SiC power semiconductor device was measured by this method and detailed dopant distribution and depletion layer distributions were imaged.
|Number of pages||4|
|Publication status||Published - 2014|
|Event||40th International Symposium for Testing and Failure Analysis, ISTFA 2014 - Houston, United States|
Duration: 2014 Nov 9 → 2014 Nov 13
|Conference||40th International Symposium for Testing and Failure Analysis, ISTFA 2014|
|Period||14/11/9 → 14/11/13|