Evaluations of crystal defects of 3C-SiC (111) film on Si(110) substrate

Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Detailed analysis on the planar defects in rotated 3C-SiC(111) films grown on Si(110) substrates have been conducted by using X-ray diffraction and cross-sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C-SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C-SiC film are discussed.

Original languageEnglish
Pages (from-to)1125-1129
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number5
Publication statusPublished - 2016 May 1


  • 3C-SiC
  • dislocations
  • epitaxy
  • graphene
  • heteroepitaxy
  • transmission electron microscopy


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