Evaluations of crystal defects of 3C-SiC (111) film on Si(110) substrate

Shota Sambonsuge; Shun Ito; Sai Jiao; Hiroyuki Nagasawa; Hirokazu Fukidome; Sergey N. Filimonov; Maki Suemitsu

doi:10.1002/pssa.201532675

Evaluations of crystal defects of 3C-SiC (111) film on Si(110) substrate

Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu

RIEC - Computing System Platforms Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Detailed analysis on the planar defects in rotated 3C-SiC(111) films grown on Si(110) substrates have been conducted by using X-ray diffraction and cross-sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C-SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C-SiC film are discussed.

Original language	English
Pages (from-to)	1125-1129
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	213
Issue number	5
DOIs	https://doi.org/10.1002/pssa.201532675
Publication status	Published - 2016 May 1

Keywords

3C-SiC
dislocations
epitaxy
graphene
heteroepitaxy
transmission electron microscopy

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10.1002/pssa.201532675

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abstract = "Detailed analysis on the planar defects in rotated 3C-SiC(111) films grown on Si(110) substrates have been conducted by using X-ray diffraction and cross-sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C-SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C-SiC film are discussed.",

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AU - Sambonsuge, Shota

AU - Ito, Shun

AU - Jiao, Sai

AU - Nagasawa, Hiroyuki

AU - Fukidome, Hirokazu

AU - Filimonov, Sergey N.

AU - Suemitsu, Maki

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N2 - Detailed analysis on the planar defects in rotated 3C-SiC(111) films grown on Si(110) substrates have been conducted by using X-ray diffraction and cross-sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C-SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C-SiC film are discussed.

AB - Detailed analysis on the planar defects in rotated 3C-SiC(111) films grown on Si(110) substrates have been conducted by using X-ray diffraction and cross-sectional transmission electron microscopy. While the film mostly consists of a rotated region, a portion was found in its nonrotated (3C-SiC(110)) configuration, forming domain boundaries in between. Inplane twins were also found to exist within both the rotated and nonrotated regions. Their origins and their impacts on the epitaxial graphene formation on the 3C-SiC film are discussed.

KW - 3C-SiC

KW - dislocations

KW - epitaxy

KW - graphene

KW - heteroepitaxy

KW - transmission electron microscopy

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Evaluations of crystal defects of 3C-SiC (111) film on Si(110) substrate

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Keywords

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