Evidence of layered transport of bulk carriers in Fe-doped Bi2Se3 topological insulators

Jun Ge, Taishi Chen, Ming Gao, Xuefeng Wang, Xingchen Pan, Meng Tang, Bo Zhao, Jun Du, Fengqi Song, Yongbing Xu, Rong Zhang

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


We observe quantized Hall plateaus and Shubnikov de Haas oscillations in 10 at% Fe-doped Bi2Se3 flakes. All the features of the quantum transport coincide while normalizing the field-angle variable magnetoresistance to the perpendicular direction. The Hall step gives a specific contribution of ~1 e2/h per quintuple layer. This reveals a two-dimensional (2D) transport of the bulk electrons in the topological insulators. The crystal is demonstrated with an obvious ferromagnetism. Further evidences including a Berry phase of zero, a weak localization and a large effective mass rule out the contribution of the topological surface states (SS), suggesting that a great care should be taken to pindown the transport of the topological SS in topological insulators.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalSolid State Communications
Publication statusPublished - 2015 Jun 1


  • A. Topological insulators
  • D. Ferromagnetism
  • D. Magnetoresistance
  • D. Shubnikov de Haas oscillations


Dive into the research topics of 'Evidence of layered transport of bulk carriers in Fe-doped Bi2Se3 topological insulators'. Together they form a unique fingerprint.

Cite this