TY - JOUR
T1 - Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution
AU - Usami, Noritaka
AU - Takahashi, Tatsuya
AU - Fujiwara, Kozo
AU - Ujihara, Toru
AU - Sazaki, Gen
AU - Murakami, Yoshihiro
AU - Nakajima, Kazuo
PY - 2002/7
Y1 - 2002/7
N2 - Multicrystalline SiGe (mc-SiGe) with microscopic compositional distribution, which has been proposed as a promising material for solar cell applications, was characterized by microscopic Raman spectroscopy. As expected, a strong spatial variation of Raman spectra was observed. However, the compositional distribution obtained by a separate energy-dispersive X-ray analysis did not fully explain the observed spatial variation of Raman spectra. A plausible explanation of the inconsistency is the existence of built-in strain, which originates from the lattice mismatch between Si and Ge.
AB - Multicrystalline SiGe (mc-SiGe) with microscopic compositional distribution, which has been proposed as a promising material for solar cell applications, was characterized by microscopic Raman spectroscopy. As expected, a strong spatial variation of Raman spectra was observed. However, the compositional distribution obtained by a separate energy-dispersive X-ray analysis did not fully explain the observed spatial variation of Raman spectra. A plausible explanation of the inconsistency is the existence of built-in strain, which originates from the lattice mismatch between Si and Ge.
KW - Microscopic compositional distribution
KW - Multicrystalline SiGe
KW - Solar cell
KW - Strain
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U2 - 10.1143/jjap.41.4462
DO - 10.1143/jjap.41.4462
M3 - Article
AN - SCOPUS:0036655960
SN - 0021-4922
VL - 41
SP - 4462
EP - 4465
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 7 A
ER -