TY - JOUR
T1 - Evolution of magnetism in U(Ni1-xPdx)2Si2 single crystals
AU - Honda, F.
AU - Andreev, A. V.
AU - Sechovský, V.
AU - Homma, Y.
AU - Shiokawa, Y.
PY - 2002/12/1
Y1 - 2002/12/1
N2 - Single crystals of U(Ni1-xPdx)2Si2 with x = 0.05, 0.09 and 0.135 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures and magnetic fields in order to study stability of magnetic phases in the solid solutions between UNi2Si2 and UPd2Si2 with a special emphasis on the type of ground state. In UPd2Si2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi2Si2 adopts the uncompensated AF structure (UAF) with the + + - stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to the coexistence of the AF-I and UAF phases in the ground state of U(Ni0.91Pd0.09)2Si2 and U(Ni0.865Pd0.135)2Si2. In this scenario, the volume fraction of the AF-I phase rapidly grows with Pd doping on account of the UAF. At lowest temperatures an irreversible transition to the UAF phase is observed when a sufficiently high magnetic field is applied along the c-axis.
AB - Single crystals of U(Ni1-xPdx)2Si2 with x = 0.05, 0.09 and 0.135 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures and magnetic fields in order to study stability of magnetic phases in the solid solutions between UNi2Si2 and UPd2Si2 with a special emphasis on the type of ground state. In UPd2Si2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi2Si2 adopts the uncompensated AF structure (UAF) with the + + - stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to the coexistence of the AF-I and UAF phases in the ground state of U(Ni0.91Pd0.09)2Si2 and U(Ni0.865Pd0.135)2Si2. In this scenario, the volume fraction of the AF-I phase rapidly grows with Pd doping on account of the UAF. At lowest temperatures an irreversible transition to the UAF phase is observed when a sufficiently high magnetic field is applied along the c-axis.
KW - 75.30 Gw Magnetic anisotropy
KW - 75.30 Kz Magnetic phase transitions
KW - 75.50 Ee Antiferromagnetic materials
KW - 75.50 Gg Ferrimagnetics
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U2 - 10.1140/epjb/e2002-00384-5
DO - 10.1140/epjb/e2002-00384-5
M3 - Article
AN - SCOPUS:0041401345
SN - 1434-6028
VL - 30
SP - 313
EP - 318
JO - European Physical Journal B
JF - European Physical Journal B
IS - 3
ER -