Excellent electric properties of free-standing InAs membranes

Hiroshi Yamaguchi, Remi Dreyfus, Yoshiro Hirayama, Sen Miyashita

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


We fabricated semiconducting free-standing-beam and Hall-bar structures with a high slenderness ratio, a minimum thickness of 50 nm, and a typical length of several tens of microns using InAs membranes processed from InAs/GaAs heterostructures. These structures showed clear electric conductivity without any intentional doping. We obtained the carrier concentration and mobility by means of standard Hall measurements, thus confirming that both parameters were much larger than those of as-grown heterostructure samples. These results indicate that this material system is promising for micro/nanoelectromechanical system applications.

Original languageEnglish
Pages (from-to)2372-2374
Number of pages3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2001 Apr 16


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