Excellent electric properties of free-standing InAs membranes

Hiroshi Yamaguchi; Remi Dreyfus; Yoshiro Hirayama; Sen Miyashita

doi:10.1063/1.1365946

Excellent electric properties of free-standing InAs membranes

Hiroshi Yamaguchi, Remi Dreyfus, Yoshiro Hirayama, Sen Miyashita

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We fabricated semiconducting free-standing-beam and Hall-bar structures with a high slenderness ratio, a minimum thickness of 50 nm, and a typical length of several tens of microns using InAs membranes processed from InAs/GaAs heterostructures. These structures showed clear electric conductivity without any intentional doping. We obtained the carrier concentration and mobility by means of standard Hall measurements, thus confirming that both parameters were much larger than those of as-grown heterostructure samples. These results indicate that this material system is promising for micro/nanoelectromechanical system applications.

Original language	English
Pages (from-to)	2372-2374
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	16
DOIs	https://doi.org/10.1063/1.1365946
Publication status	Published - 2001 Apr 16

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AU - Miyashita, Sen

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AB - We fabricated semiconducting free-standing-beam and Hall-bar structures with a high slenderness ratio, a minimum thickness of 50 nm, and a typical length of several tens of microns using InAs membranes processed from InAs/GaAs heterostructures. These structures showed clear electric conductivity without any intentional doping. We obtained the carrier concentration and mobility by means of standard Hall measurements, thus confirming that both parameters were much larger than those of as-grown heterostructure samples. These results indicate that this material system is promising for micro/nanoelectromechanical system applications.

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Excellent electric properties of free-standing InAs membranes

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