Exciton-exciton scattering in poly(di-n-hexylsilane) films

Makoto Shimizu; Shozo Suto; Aishi Yamamoto; Takenari Goto; Kasuya Atsuo Kasuya; Akira Watanabe; Minoru Matsuda

doi:10.1016/S0022-2313(99)00478-0

Exciton-exciton scattering in poly(di-n-hexylsilane) films

Makoto Shimizu, Shozo Suto, Aishi Yamamoto, Takenari Goto, Kasuya Atsuo Kasuya, Akira Watanabe, Minoru Matsuda

IEHE - Institute for Excellence in Higher Education (organization affiliation only)

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

We have measured the time response of luminescence intensity in poly(di-n-hexylsilane) films with the excitation density from 1.2 × 10¹⁸ to 1.1 × 10²⁰ excitons cm^-3 at 2 K. At 1.1 × 10²⁰ cm^-3, we found that the rise times is 1.4 ± 0.5 ps and that the decay is nonexponential. The rise time is attributed to the exciton-exciton scattering time in which initially photo-generated excitons at 4 eV are scattered to the luminescent states at 3.4 eV. The nonexponential decay is ascribed to the bimolecular annihilation of excitons with the rate constant γ₂ of (1.0 ± 0.5) × 10^-8 cm³ s^-1. A microscopic mechanism to explain this large γ₂ is discussed.

Original language	English
Pages (from-to)	933-935
Number of pages	3
Journal	Journal of Luminescence
Volume	87
DOIs	https://doi.org/10.1016/S0022-2313(99)00478-0
Publication status	Published - 2000 May
Event	International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99) - Osaka, Jpn Duration: 1999 Aug 23 → 1999 Aug 27

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@article{88aae921b08c435abe5fce2afd522ca1,

title = "Exciton-exciton scattering in poly(di-n-hexylsilane) films",

abstract = "We have measured the time response of luminescence intensity in poly(di-n-hexylsilane) films with the excitation density from 1.2 × 1018 to 1.1 × 1020 excitons cm-3 at 2 K. At 1.1 × 1020 cm-3, we found that the rise times is 1.4 ± 0.5 ps and that the decay is nonexponential. The rise time is attributed to the exciton-exciton scattering time in which initially photo-generated excitons at 4 eV are scattered to the luminescent states at 3.4 eV. The nonexponential decay is ascribed to the bimolecular annihilation of excitons with the rate constant γ2 of (1.0 ± 0.5) × 10-8 cm3 s-1. A microscopic mechanism to explain this large γ2 is discussed.",

author = "Makoto Shimizu and Shozo Suto and Aishi Yamamoto and Takenari Goto and {Atsuo Kasuya}, Kasuya and Akira Watanabe and Minoru Matsuda",

year = "2000",

month = may,

doi = "10.1016/S0022-2313(99)00478-0",

language = "English",

volume = "87",

pages = "933--935",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

note = "International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99) ; Conference date: 23-08-1999 Through 27-08-1999",

}

TY - JOUR

T1 - Exciton-exciton scattering in poly(di-n-hexylsilane) films

AU - Shimizu, Makoto

AU - Suto, Shozo

AU - Yamamoto, Aishi

AU - Goto, Takenari

AU - Atsuo Kasuya, Kasuya

AU - Watanabe, Akira

AU - Matsuda, Minoru

PY - 2000/5

Y1 - 2000/5

N2 - We have measured the time response of luminescence intensity in poly(di-n-hexylsilane) films with the excitation density from 1.2 × 1018 to 1.1 × 1020 excitons cm-3 at 2 K. At 1.1 × 1020 cm-3, we found that the rise times is 1.4 ± 0.5 ps and that the decay is nonexponential. The rise time is attributed to the exciton-exciton scattering time in which initially photo-generated excitons at 4 eV are scattered to the luminescent states at 3.4 eV. The nonexponential decay is ascribed to the bimolecular annihilation of excitons with the rate constant γ2 of (1.0 ± 0.5) × 10-8 cm3 s-1. A microscopic mechanism to explain this large γ2 is discussed.

AB - We have measured the time response of luminescence intensity in poly(di-n-hexylsilane) films with the excitation density from 1.2 × 1018 to 1.1 × 1020 excitons cm-3 at 2 K. At 1.1 × 1020 cm-3, we found that the rise times is 1.4 ± 0.5 ps and that the decay is nonexponential. The rise time is attributed to the exciton-exciton scattering time in which initially photo-generated excitons at 4 eV are scattered to the luminescent states at 3.4 eV. The nonexponential decay is ascribed to the bimolecular annihilation of excitons with the rate constant γ2 of (1.0 ± 0.5) × 10-8 cm3 s-1. A microscopic mechanism to explain this large γ2 is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0033737675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033737675&partnerID=8YFLogxK

U2 - 10.1016/S0022-2313(99)00478-0

DO - 10.1016/S0022-2313(99)00478-0

M3 - Conference article

AN - SCOPUS:0033737675

SN - 0022-2313

VL - 87

SP - 933

EP - 935

JO - Journal of Luminescence

JF - Journal of Luminescence

T2 - International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99)

Y2 - 23 August 1999 through 27 August 1999

ER -

Exciton-exciton scattering in poly(di-n-hexylsilane) films

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