Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

Shigefusa Chichibu; Satoru Matsumoto; Sho Shirakata; Shigehiro Isomura; Hirofumi Higuchi

doi:10.1063/1.355129

Excitonic photoluminescence in a CuAlSe₂ chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

Shigefusa Chichibu, Satoru Matsumoto, Sho Shirakata, Shigehiro Isomura, Hirofumi Higuchi

IMRAM - Division of Measurements

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32 Citations (Scopus)

Abstract

Excitonic photoluminescence (PL) in a CuAlSe₂ chalcopyrite semiconductor was observed. High-quality CuAlSe₂ epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

Original language	English
Pages (from-to)	6446-6447
Number of pages	2
Journal	Journal of Applied Physics
Volume	74
Issue number	10
DOIs	https://doi.org/10.1063/1.355129
Publication status	Published - 1993

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title = "Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition",

abstract = "Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.",

author = "Shigefusa Chichibu and Satoru Matsumoto and Sho Shirakata and Shigehiro Isomura and Hirofumi Higuchi",

year = "1993",

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T1 - Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

AU - Chichibu, Shigefusa

AU - Matsumoto, Satoru

AU - Shirakata, Sho

AU - Isomura, Shigehiro

AU - Higuchi, Hirofumi

PY - 1993

Y1 - 1993

N2 - Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

AB - Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Excitonic photoluminescence in a CuAlSe₂ chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

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