Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.
|Number of pages||9|
|Journal||Physica B: Condensed Matter|
|Publication status||Published - 2001|
|Event||Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan|
Duration: 2000 Sept 24 → 2000 Sept 27
- Excitonic polariton
- Lateral epitaxial overgrowth