Existence of extinction temperature in WSix film growth from WF6 and SiH4: An indication of the role played by radical chain reactions

T. Saito, Y. Shimogaki, Y. Egashira, H. Komiyama, Y. Yuyama, K. Sugawara, S. Nagata, K. Takahiro, S. Yamaguchi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Low pressure chemical vapor deposition (LPCVD) was carried out to deposit tungsten silicide films (WSix) from WF6 and SiH 4 in a low temperature range from 80 to 390°C, using a tubular reactor system. Drastic decrease of the deposition rate occurred at an extinction temperature Tex. Increase of the reactor size in the range from 4 to 22 mmφ decreased Tex from 140 to 80°C. Above Tex, the sticking probability of the film forming species (η) and the film composition, x of WSix, did not depend on the reactor diameter. Dependence of Tex on the reactor diameter and independence of η and x above Tex from the reactor diameter indicates that a radical chain process dominates CVD-WSix process to form film forming species.

Original languageEnglish
Pages (from-to)1606-1608
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number14
DOIs
Publication statusPublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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