Low pressure chemical vapor deposition (LPCVD) was carried out to deposit tungsten silicide films (WSix) from WF6 and SiH 4 in a low temperature range from 80 to 390°C, using a tubular reactor system. Drastic decrease of the deposition rate occurred at an extinction temperature Tex. Increase of the reactor size in the range from 4 to 22 mmφ decreased Tex from 140 to 80°C. Above Tex, the sticking probability of the film forming species (η) and the film composition, x of WSix, did not depend on the reactor diameter. Dependence of Tex on the reactor diameter and independence of η and x above Tex from the reactor diameter indicates that a radical chain process dominates CVD-WSix process to form film forming species.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1993|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)