Expanded self-limiting growth condition of InP using alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum

The alternate injection of trimethylindium (TMI) and tertiarybutylphosphine (TBP) without precracking was studied to expand the self-limiting growth conditions of an InP layer on InP substrates in ultrahigh vacuum. The range of growth conditions for self-limiting growth using TMI expanded two-fold compared to that using triethylindium (TEI). The carbon concentration in the InP layer grown using TMI was almost the same as that using TEI under self-limiting growth conditions. The growth rate of approximately 0.75 monolayers per cycle at the plateau was achieved on (0 0 1 )-(1 1 1)A-, and (1 1 1)B-oriented InP substrates. It was suggested that the decomposition process of TMI is identical to that of TEI, and that the growth rate with the self-limiting growth conditions results from the surface occupancy of phosphorus precursors.