Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors

Tetsuro Hayashida; Kazuhiko Endo; Yongxun Liu; Shin Ichi O'Uchi; Takashi Matsukawa; Yusuke Wataru Mizubayashi; Shinji Migita; Yukinori Morita; Hiroyuki Ota; Hiroki Hashiguchi; Daisuke Kosemura; Takahiro Kamei; Junichi Tsukada; Yuki Ishikawa; Hiromi Yamauchi; Atsushi Ogura; Meishoku Masahara

doi:10.1143/JJAP.51.04DA05

Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors

Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Shin Ichi O'Uchi, Takashi Matsukawa, Yusuke Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Hiroki Hashiguchi, Daisuke Kosemura, Takahiro Kamei, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal-oxide-semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (Vth) variation, of the fabricated ALD and physical-vapordeposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small Lg region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller Vth variation than the PVD-TiN gate FinFETs.

Original language	English
Article number	04DA05
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.51.04DA05
Publication status	Published - 2012 Apr

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Hayashida, T., Endo, K., Liu, Y., O'Uchi, S. I., Matsukawa, T., Mizubayashi, Y. W., Migita, S., Morita, Y., Ota, H., Hashiguchi, H., Kosemura, D., Kamei, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., & Masahara, M. (2012). Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics, 51(4 PART 2), Article 04DA05. https://doi.org/10.1143/JJAP.51.04DA05

@article{d0a339151123464f8381d5a4158166b9,

title = "Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors",

abstract = "In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal-oxide-semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (Vth) variation, of the fabricated ALD and physical-vapordeposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small Lg region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller Vth variation than the PVD-TiN gate FinFETs.",

author = "Tetsuro Hayashida and Kazuhiko Endo and Yongxun Liu and O'Uchi, {Shin Ichi} and Takashi Matsukawa and Mizubayashi, {Yusuke Wataru} and Shinji Migita and Yukinori Morita and Hiroyuki Ota and Hiroki Hashiguchi and Daisuke Kosemura and Takahiro Kamei and Junichi Tsukada and Yuki Ishikawa and Hiromi Yamauchi and Atsushi Ogura and Meishoku Masahara",

year = "2012",

month = apr,

doi = "10.1143/JJAP.51.04DA05",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 PART 2",

}

Hayashida, T, Endo, K, Liu, Y, O'Uchi, SI, Matsukawa, T, Mizubayashi, YW, Migita, S, Morita, Y, Ota, H, Hashiguchi, H, Kosemura, D, Kamei, T, Tsukada, J, Ishikawa, Y, Yamauchi, H, Ogura, A & Masahara, M 2012, 'Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors', Japanese Journal of Applied Physics, vol. 51, no. 4 PART 2, 04DA05. https://doi.org/10.1143/JJAP.51.04DA05

Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors. / Hayashida, Tetsuro; Endo, Kazuhiko; Liu, Yongxun et al.
In: Japanese Journal of Applied Physics, Vol. 51, No. 4 PART 2, 04DA05, 04.2012.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors

AU - Hayashida, Tetsuro

AU - Endo, Kazuhiko

AU - Liu, Yongxun

AU - O'Uchi, Shin Ichi

AU - Matsukawa, Takashi

AU - Mizubayashi, Yusuke Wataru

AU - Migita, Shinji

AU - Morita, Yukinori

AU - Ota, Hiroyuki

AU - Hashiguchi, Hiroki

AU - Kosemura, Daisuke

AU - Kamei, Takahiro

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - Ogura, Atsushi

AU - Masahara, Meishoku

PY - 2012/4

Y1 - 2012/4

N2 - In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal-oxide-semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (Vth) variation, of the fabricated ALD and physical-vapordeposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small Lg region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller Vth variation than the PVD-TiN gate FinFETs.

AB - In this study, we successfully introduced an atomic-layer-deposited (ALD) titanium nitride (TiN) gate grown with a tetrakis(dimethylamino)titanium (TDMAT) precursor into fin-type metal-oxide-semiconductor field-effect transistor (FinFET) fabrication for the first time, and comparatively investigated the electrical characteristics, including mobility and threshold voltage (Vth) variation, of the fabricated ALD and physical-vapordeposited (PVD)-TiN gate FinFETs. The ALD-TiN gate FinFETs showed superior conformality to the PVD-TiN gate FinFETs. The electron mobilities of the ALD- and PVD-TiN gate FinFETs were comparable in the small Lg region. It was also confirmed that the ALD-TiN gate FinFETs showed a smaller Vth variation than the PVD-TiN gate FinFETs.

UR - http://www.scopus.com/inward/record.url?scp=84860372156&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860372156&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.04DA05

DO - 10.1143/JJAP.51.04DA05

M3 - Article

AN - SCOPUS:84860372156

SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

M1 - 04DA05

ER -

Hayashida T, Endo K, Liu Y, O'Uchi SI, Matsukawa T, Mizubayashi YW et al. Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics. 2012 Apr;51(4 PART 2):04DA05. doi: 10.1143/JJAP.51.04DA05

Experimental comparisons between tetrakis(dimethylamino)titanium precursor-based atomic-layer-deposited and physical-vapor-deposited titanium-nitride gate for high-performance fin-type metal-oxide-semiconductor field-effect transistors

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