TY - JOUR
T1 - Experimental demonstration of resonant spin-orbit interaction effect
AU - Kunihashi, Yoji
AU - Kohda, Makoto
AU - Nitta, Junsaku
N1 - Funding Information:
The authors wish to thank S. Kettemann and M. Scheid for valuable discussions. This work was partly supported by Grants-in-Aid from JSPS, MEXT, SCOPE of the Ministry of Internal Affairs and Communications, Global COE Program “Materials Integration, Tohoku University”, MEXT, and Mitsubishi Foundation. This work was partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.
PY - 2010/1/31
Y1 - 2010/1/31
N2 - We investigated the spin lifetime in gate-fitted InGaAs narrow wires by magnetotransport measurement. By applying positive gate bias voltage, the spin lifetime in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. By comparison with a theoretical model of the quasi one-dimensional transport, it is found that this enhancement of spin lifetime in gated wires is due to dimensional confinement and resonant spin-orbit interaction effect by gate bias modulation of the Rashba spin-orbit interaction. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.
AB - We investigated the spin lifetime in gate-fitted InGaAs narrow wires by magnetotransport measurement. By applying positive gate bias voltage, the spin lifetime in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. By comparison with a theoretical model of the quasi one-dimensional transport, it is found that this enhancement of spin lifetime in gated wires is due to dimensional confinement and resonant spin-orbit interaction effect by gate bias modulation of the Rashba spin-orbit interaction. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.
KW - Quantum wire
KW - Spin-orbit interaction
KW - Weak antilocalization
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U2 - 10.1016/j.phpro.2010.01.173
DO - 10.1016/j.phpro.2010.01.173
M3 - Conference article
AN - SCOPUS:76149146971
SN - 1875-3892
VL - 3
SP - 1261
EP - 1266
JO - Physics Procedia
JF - Physics Procedia
IS - 2
T2 - 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14
Y2 - 13 July 2009 through 17 July 2009
ER -