Experimental determination of band offsets of NiO-based thin film heterojunctions

Daisuke Kawade; Shigefusa F. Chichibu; Mutsumi Sugiyama

doi:10.1063/1.4900737

Experimental determination of band offsets of NiO-based thin film heterojunctions

Daisuke Kawade, Shigefusa F. Chichibu, Mutsumi Sugiyama

Division of Measurements

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg_0.3Zn_0.7O, Zn_0.5Sn_0.5O, In₂O₃:Sn (ITO), SnO₂, and TiO₂ were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6 eV for ZnO/NiO and Mg_0.3Zn_0.7O/NiO, 1.7 eV for Zn_0.5Sn_0.5O/NiO and ITO/NiO, and 1.8 eV for SnO₂/NiO and TiO₂/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (V_oc) of 0.96 V, short circuit current density (J_sc) of 2.2 μA/cm², and fill factor of 0.44.

Original language	English
Article number	163108
Journal	Journal of Applied Physics
Volume	116
Issue number	16
DOIs	https://doi.org/10.1063/1.4900737
Publication status	Published - 2014 Oct 28

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Physics and Astronomy(all)

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Experimental determination of band offsets of NiO-based thin film heterojunctions",

abstract = "The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg0.3Zn0.7O, Zn0.5Sn0.5O, In2O3:Sn (ITO), SnO2, and TiO2 were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6 eV for ZnO/NiO and Mg0.3Zn0.7O/NiO, 1.7 eV for Zn0.5Sn0.5O/NiO and ITO/NiO, and 1.8 eV for SnO2/NiO and TiO2/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (Voc) of 0.96 V, short circuit current density (Jsc) of 2.2 μA/cm2, and fill factor of 0.44.",

author = "Daisuke Kawade and Chichibu, {Shigefusa F.} and Mutsumi Sugiyama",

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AU - Kawade, Daisuke

AU - Chichibu, Shigefusa F.

AU - Sugiyama, Mutsumi

PY - 2014/10/28

Y1 - 2014/10/28

N2 - The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg0.3Zn0.7O, Zn0.5Sn0.5O, In2O3:Sn (ITO), SnO2, and TiO2 were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6 eV for ZnO/NiO and Mg0.3Zn0.7O/NiO, 1.7 eV for Zn0.5Sn0.5O/NiO and ITO/NiO, and 1.8 eV for SnO2/NiO and TiO2/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (Voc) of 0.96 V, short circuit current density (Jsc) of 2.2 μA/cm2, and fill factor of 0.44.

AB - The energy band diagrams of NiO-based solar cell structures that use various n-type oxide semiconductors such as ZnO, Mg0.3Zn0.7O, Zn0.5Sn0.5O, In2O3:Sn (ITO), SnO2, and TiO2 were evaluated by photoelectron yield spectroscopy. The valence band discontinuities were estimated to be 1.6 eV for ZnO/NiO and Mg0.3Zn0.7O/NiO, 1.7 eV for Zn0.5Sn0.5O/NiO and ITO/NiO, and 1.8 eV for SnO2/NiO and TiO2/NiO heterojunctions. By using the valence band discontinuity values and corresponding energy bandgaps of the layers, energy band diagrams were developed. Judging from the band diagram, an appropriate solar cell consisting of p-type NiO and n-type ZnO layers was deposited on ITO, and a slight but noticeable photovoltaic effect was obtained with an open circuit voltage (Voc) of 0.96 V, short circuit current density (Jsc) of 2.2 μA/cm2, and fill factor of 0.44.

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Experimental determination of band offsets of NiO-based thin film heterojunctions

Abstract

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