Experimental evaluation of effects of channel doping on characteristics of FinFETs

Kazuhiko Endo; Yuki Ishikawa; Yongxum Liu; Meishoku Masahara; Takashi Matsukawa; Shin Ichi O'uchi; Kenichi Ishii; Hiromi Yamauchi; Juniichi Tsukada; Eiichi Suzuki

doi:10.1109/LED.2007.909841

Experimental evaluation of effects of channel doping on characteristics of FinFETs

Kazuhiko Endo, Yuki Ishikawa, Yongxum Liu, Meishoku Masahara, Takashi Matsukawa, Shin Ichi O'uchi, Kenichi Ishii, Hiromi Yamauchi, Juniichi Tsukada, Eiichi Suzuki

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We investigated channel doping in fin-type double-gate (DG) MOSFETs. We demonstrated through experiments that the threshold voltage was more sensitive to the dopants in the accumulation mode than in the inversion mode. We also found that significant deviation in the threshold voltage from the expected value arose in ultrathin fin-type DG MOSFETs. We attributed this phenomenon to the unexpected dopant loss from the ultrathin channels due to segregation. This finding means that careful doping adjustments must be made in ultrathin-channel devices.

Original language	English
Pages (from-to)	1123-1125
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	12
DOIs	https://doi.org/10.1109/LED.2007.909841
Publication status	Published - 2007 Dec
Externally published	Yes

Keywords

Channel doping
Dopant loss
Doping
Double-gate (DG) MOSFET
MOSFET
Threshold voltage
Voltage control

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.909841

Cite this

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abstract = "We investigated channel doping in fin-type double-gate (DG) MOSFETs. We demonstrated through experiments that the threshold voltage was more sensitive to the dopants in the accumulation mode than in the inversion mode. We also found that significant deviation in the threshold voltage from the expected value arose in ultrathin fin-type DG MOSFETs. We attributed this phenomenon to the unexpected dopant loss from the ultrathin channels due to segregation. This finding means that careful doping adjustments must be made in ultrathin-channel devices.",

keywords = "Channel doping, Dopant loss, Doping, Double-gate (DG) MOSFET, MOSFET, Threshold voltage, Voltage control",

author = "Kazuhiko Endo and Yuki Ishikawa and Yongxum Liu and Meishoku Masahara and Takashi Matsukawa and O'uchi, {Shin Ichi} and Kenichi Ishii and Hiromi Yamauchi and Juniichi Tsukada and Eiichi Suzuki",

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T1 - Experimental evaluation of effects of channel doping on characteristics of FinFETs

AU - Endo, Kazuhiko

AU - Ishikawa, Yuki

AU - Liu, Yongxum

AU - Masahara, Meishoku

AU - Matsukawa, Takashi

AU - O'uchi, Shin Ichi

AU - Ishii, Kenichi

AU - Yamauchi, Hiromi

AU - Tsukada, Juniichi

AU - Suzuki, Eiichi

PY - 2007/12

Y1 - 2007/12

N2 - We investigated channel doping in fin-type double-gate (DG) MOSFETs. We demonstrated through experiments that the threshold voltage was more sensitive to the dopants in the accumulation mode than in the inversion mode. We also found that significant deviation in the threshold voltage from the expected value arose in ultrathin fin-type DG MOSFETs. We attributed this phenomenon to the unexpected dopant loss from the ultrathin channels due to segregation. This finding means that careful doping adjustments must be made in ultrathin-channel devices.

AB - We investigated channel doping in fin-type double-gate (DG) MOSFETs. We demonstrated through experiments that the threshold voltage was more sensitive to the dopants in the accumulation mode than in the inversion mode. We also found that significant deviation in the threshold voltage from the expected value arose in ultrathin fin-type DG MOSFETs. We attributed this phenomenon to the unexpected dopant loss from the ultrathin channels due to segregation. This finding means that careful doping adjustments must be made in ultrathin-channel devices.

KW - Channel doping

KW - Dopant loss

KW - Doping

KW - Double-gate (DG) MOSFET

KW - MOSFET

KW - Threshold voltage

KW - Voltage control

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Experimental evaluation of effects of channel doping on characteristics of FinFETs

Abstract

Keywords

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