Experimental evaluation of effects of channel doping on characteristics of FinFETs

Kazuhiko Endo, Yuki Ishikawa, Yongxum Liu, Meishoku Masahara, Takashi Matsukawa, Shin Ichi O'uchi, Kenichi Ishii, Hiromi Yamauchi, Juniichi Tsukada, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


We investigated channel doping in fin-type double-gate (DG) MOSFETs. We demonstrated through experiments that the threshold voltage was more sensitive to the dopants in the accumulation mode than in the inversion mode. We also found that significant deviation in the threshold voltage from the expected value arose in ultrathin fin-type DG MOSFETs. We attributed this phenomenon to the unexpected dopant loss from the ultrathin channels due to segregation. This finding means that careful doping adjustments must be made in ultrathin-channel devices.

Original languageEnglish
Pages (from-to)1123-1125
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
Publication statusPublished - 2007 Dec
Externally publishedYes


  • Channel doping
  • Dopant loss
  • Doping
  • Double-gate (DG) MOSFET
  • Threshold voltage
  • Voltage control

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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