Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

T. Kawanago; J. Song; K. Kakushima; P. Ahmet; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai

doi:10.1016/j.mee.2009.03.106

Experimental study for high effective mobility with directly deposited HfO₂/La₂O₃ MOSFET

T. Kawanago, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We experimentally examine the effective mobility in nMOSFETs with La₂O₃ gate dielectrics without SiO_x-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at N_s = 5 × 10¹¹ cm^-2 in the low 10¹¹ cm^-2 eV^-1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT.

Original language	English
Pages (from-to)	1629-1631
Number of pages	3
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.106
Publication status	Published - 2009 Jul
Externally published	Yes

Keywords

Direct contact
Effective mobility
High-k

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2009.03.106

Cite this

@article{59e797db04834b11aae261703a163c7d,

title = "Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET",

abstract = "We experimentally examine the effective mobility in nMOSFETs with La2O3 gate dielectrics without SiOx-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at Ns = 5 × 1011 cm-2 in the low 1011 cm-2 eV-1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT.",

keywords = "Direct contact, Effective mobility, High-k",

author = "T. Kawanago and J. Song and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai",

note = "Funding Information: This study was partially supported by the Japan Society for the Promotion of Science (JSPS).",

year = "2009",

month = jul,

doi = "10.1016/j.mee.2009.03.106",

language = "English",

volume = "86",

pages = "1629--1631",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "7-9",

}

TY - JOUR

T1 - Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

AU - Kawanago, T.

AU - Song, J.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Sugii, N.

AU - Hattori, T.

AU - Iwai, H.

N1 - Funding Information: This study was partially supported by the Japan Society for the Promotion of Science (JSPS).

PY - 2009/7

Y1 - 2009/7

N2 - We experimentally examine the effective mobility in nMOSFETs with La2O3 gate dielectrics without SiOx-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at Ns = 5 × 1011 cm-2 in the low 1011 cm-2 eV-1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT.

AB - We experimentally examine the effective mobility in nMOSFETs with La2O3 gate dielectrics without SiOx-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at Ns = 5 × 1011 cm-2 in the low 1011 cm-2 eV-1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT.

KW - Direct contact

KW - Effective mobility

KW - High-k

UR - http://www.scopus.com/inward/record.url?scp=67349208908&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349208908&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2009.03.106

DO - 10.1016/j.mee.2009.03.106

M3 - Article

AN - SCOPUS:67349208908

SN - 0167-9317

VL - 86

SP - 1629

EP - 1631

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -