Experimental study of charge trapping type FinFET flash memory

Yongxun Liu; Toshihide Nabatame; Takashi Matsukawa; Kazuhiko Endo; Sinichi O'Uchi; Junichi Tsukada; Hiromi Yamauchi; Yuki Ishikawa; Wataru Mizubayashi; Yukinori Morita; Shinji Migita; Hiroyuki Ota; Toyohiro Chikyow; Meishoku Masahara

doi:10.1109/INEC.2014.7460429

Experimental study of charge trapping type FinFET flash memory

Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Sinichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al₂O₃ blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al₂O₃ and the high gate work function of TiN.

Original language	English
Title of host publication	2014 IEEE International Nanoelectronics Conference, INEC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460429
Publication status	Published - 2016 Apr 26
Event	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: 2014 Jul 28 → 2014 Jul 31

Publication series

Name	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
Country/Territory	Japan
City	Sapporo
Period	14/7/28 → 14/7/31

Keywords

3D fin-channel
Blocking layer
Charge trapping
FinFET
Flash memory
Gate work function
High-k

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10.1109/INEC.2014.7460429

Cite this

Liu, Y., Nabatame, T., Matsukawa, T., Endo, K., O'Uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Chikyow, T., & Masahara, M. (2016). Experimental study of charge trapping type FinFET flash memory. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 Article 7460429 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460429

@inproceedings{b5d072e3b8c04bd0b73f0f2b44e3d8cc,

title = "Experimental study of charge trapping type FinFET flash memory",

abstract = "The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.",

keywords = "3D fin-channel, Blocking layer, Charge trapping, FinFET, Flash memory, Gate work function, High-k",

author = "Yongxun Liu and Toshihide Nabatame and Takashi Matsukawa and Kazuhiko Endo and Sinichi O'Uchi and Junichi Tsukada and Hiromi Yamauchi and Yuki Ishikawa and Wataru Mizubayashi and Yukinori Morita and Shinji Migita and Hiroyuki Ota and Toyohiro Chikyow and Meishoku Masahara",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/INEC.2014.7460429",

language = "English",

series = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2014 IEEE International Nanoelectronics Conference, INEC 2014",

address = "United States",

}

Liu, Y, Nabatame, T, Matsukawa, T, Endo, K, O'Uchi, S, Tsukada, J, Yamauchi, H, Ishikawa, Y, Mizubayashi, W, Morita, Y, Migita, S, Ota, H, Chikyow, T & Masahara, M 2016, Experimental study of charge trapping type FinFET flash memory. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460429, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 14/7/28. https://doi.org/10.1109/INEC.2014.7460429

Experimental study of charge trapping type FinFET flash memory. / Liu, Yongxun; Nabatame, Toshihide; Matsukawa, Takashi et al.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460429 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Experimental study of charge trapping type FinFET flash memory

AU - Liu, Yongxun

AU - Nabatame, Toshihide

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - O'Uchi, Sinichi

AU - Tsukada, Junichi

AU - Yamauchi, Hiromi

AU - Ishikawa, Yuki

AU - Mizubayashi, Wataru

AU - Morita, Yukinori

AU - Migita, Shinji

AU - Ota, Hiroyuki

AU - Chikyow, Toyohiro

AU - Masahara, Meishoku

PY - 2016/4/26

Y1 - 2016/4/26

N2 - The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.

AB - The 3D fin-channel SONOS, MONOS and MANOS type flash memories with different gate and blocking layer materials have been successfully fabricated and their electrical characteristics have been comparatively investigated. It was found that MANOS type flash memory with an Al2O3 blocking layer and a TiN metal gate shows the better performance as compared to the SONOS and MONOS type ones thanks to the high-k effect of Al2O3 and the high gate work function of TiN.

KW - 3D fin-channel

KW - Blocking layer

KW - Charge trapping

KW - FinFET

KW - Flash memory

KW - Gate work function

KW - High-k

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U2 - 10.1109/INEC.2014.7460429

DO - 10.1109/INEC.2014.7460429

M3 - Conference contribution

AN - SCOPUS:84971201864

T3 - 2014 IEEE International Nanoelectronics Conference, INEC 2014

BT - 2014 IEEE International Nanoelectronics Conference, INEC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Nanoelectronics Conference, INEC 2014

Y2 - 28 July 2014 through 31 July 2014

ER -

Experimental study of charge trapping type FinFET flash memory

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