We present an experimental study of effective carrier mobility (μeff) of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent wet etching. The peak values of the obtained μeff of electrons and holes are approximately 300 and 160cm 2/(V s), respectively, which are close to those in (111) bulk metal-oxide-semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field (μeff) dependence of theμ eff of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of μeff are very useful for the modeling and design of FinFET-complementary metal-oxide-semiconductor (CMOS) circuits and the developed wet etching technique is very attractive inthe fabrication of ultrathin and high-quality Si-fin channels.
- (110)-orientated SOI
- Double-gate MOSFET
- Orientation-dependent wet etching
- Rectangular cross-section Si-fin channel