Experimental study of variability in polycrystalline and crystalline silicon channel FinFET CMOS inverters

Y. X. Liu, Y. Hori, M. Ohno, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Polycrystalline-silicon (poly-Si) and crystalline-silicon (crystal-Si) channel FinFET CMOS inverters were successfully fabricated and the variations of threshold voltage (Vt) for their individual n- and p-channel transistors and the logic gate Vt (VThc) for the inverters were systematically investigated. It was found that poly-Si n- and p-channel devices show about 3 and 5 times larger σVt values, respectively and about 2 times larger σVThc as compared to those in crystal-Si channel ones. The calculated σVTHC values by using the error propagation low are good agreement with experimental results.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
Publication statusPublished - 2015 Jun 3
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan, Province of China
Duration: 2015 Apr 272015 Apr 29

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Conference

Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Country/TerritoryTaiwan, Province of China
CityHsinchu
Period15/4/2715/4/29

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