Abstract
Recent studies on the preparation of some Si containing materials and Si crystals by using Na were reviewed. Silicon carbide and beta-iron disilicide (β-FeSi2) were fabricated at 700-800°C with Na melt or Na vapor. A new compound, Ba3Si4C2, was synthesized with Na melt and SiC nano-powder. The phase diagram of Na-Si binary system was proposed based on the results of thermal analysis and observation of sample morphology. Polycrystals and single crystals of Si were obtained by evaporation of Na from Na-Si melt at 800-900°C.
Original language | English |
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Pages (from-to) | 5-9 |
Number of pages | 5 |
Journal | Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals |
Volume | 75 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2011 Jan |
Keywords
- Materials processing
- Silicon
- Silicon carbide
- Sodium flux
- Sodium-silicon binary system
- Suicides