Exposure method for three-dimensional samples using phase shift mask

Minoru Sasaki; Tanjyunjyon Edwin; Kazuhiro Hane

doi:10.1541/ieejsmas.126.241

Exposure method for three-dimensional samples using phase shift mask

Minoru Sasaki, Tanjyunjyon Edwin, Kazuhiro Hane

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to journal › Article › peer-review

Abstract

An exposure method for realizing fine patterning on three-dimensional samples is described. Three-dimensional sample requires the different viewpoint from that of the proximity patterning. Concave areas can not be geometrically approached to the mask. The fine patterning becomes difficult due to the broadening of the exposure light. In this study, the phase shift mask is combined with the well-collimated mercury lamp. 5 μm-width line pattern is stably obtained on the 200 μm-deep cavity bottom.

Original language	English
Pages (from-to)	241-242
Number of pages	2
Journal	IEEJ Transactions on Sensors and Micromachines
Volume	126
Issue number	6
DOIs	https://doi.org/10.1541/ieejsmas.126.241
Publication status	Published - 2006

Keywords

Phase shift mask
Spray coating
Three-dimensional lithography

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10.1541/ieejsmas.126.241

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abstract = "An exposure method for realizing fine patterning on three-dimensional samples is described. Three-dimensional sample requires the different viewpoint from that of the proximity patterning. Concave areas can not be geometrically approached to the mask. The fine patterning becomes difficult due to the broadening of the exposure light. In this study, the phase shift mask is combined with the well-collimated mercury lamp. 5 μm-width line pattern is stably obtained on the 200 μm-deep cavity bottom.",

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author = "Minoru Sasaki and Tanjyunjyon Edwin and Kazuhiro Hane",

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AU - Edwin, Tanjyunjyon

AU - Hane, Kazuhiro

PY - 2006

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N2 - An exposure method for realizing fine patterning on three-dimensional samples is described. Three-dimensional sample requires the different viewpoint from that of the proximity patterning. Concave areas can not be geometrically approached to the mask. The fine patterning becomes difficult due to the broadening of the exposure light. In this study, the phase shift mask is combined with the well-collimated mercury lamp. 5 μm-width line pattern is stably obtained on the 200 μm-deep cavity bottom.

AB - An exposure method for realizing fine patterning on three-dimensional samples is described. Three-dimensional sample requires the different viewpoint from that of the proximity patterning. Concave areas can not be geometrically approached to the mask. The fine patterning becomes difficult due to the broadening of the exposure light. In this study, the phase shift mask is combined with the well-collimated mercury lamp. 5 μm-width line pattern is stably obtained on the 200 μm-deep cavity bottom.

KW - Phase shift mask

KW - Spray coating

KW - Three-dimensional lithography

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JO - IEEJ Transactions on Sensors and Micromachines

JF - IEEJ Transactions on Sensors and Micromachines

IS - 6

ER -

Exposure method for three-dimensional samples using phase shift mask

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Keywords

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