Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra, J. A. Chroboczek, G. Ghibaudo

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10-7- 10-6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.

Original languageEnglish
Article number033503
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2010 Jul 19
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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