Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu; T. Minari; K. Tsukagoshi; R. Gwoziecki; R. Coppard; F. Balestra; J. A. Chroboczek; G. Ghibaudo

doi:10.1063/1.3467057

Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra, J. A. Chroboczek, G. Ghibaudo

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The power spectral density of low-frequency noise in contact resistance, S_Rsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent S_Rsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant S^Rsd/R^sd₂ with respect to gate voltage are obtained in the range 10^-7- 10^-6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.

Original language	English
Article number	033503
Journal	Applied Physics Letters
Volume	97
Issue number	3
DOIs	https://doi.org/10.1063/1.3467057
Publication status	Published - 2010 Jul 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3467057

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title = "Extraction of low-frequency noise in contact resistance of organic field-effect transistors",

abstract = "The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10-7- 10-6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.",

author = "Y. Xu and T. Minari and K. Tsukagoshi and R. Gwoziecki and R. Coppard and F. Balestra and Chroboczek, {J. A.} and G. Ghibaudo",

note = "Funding Information: This study was partially supported by Grants-In-Aid for Scientific Research (Grant Nos. 17069004, 21241038, and 21750197) from the MECSST (Japan) and also by the French project PRINTRONICS. ",

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T1 - Extraction of low-frequency noise in contact resistance of organic field-effect transistors

AU - Xu, Y.

AU - Minari, T.

AU - Tsukagoshi, K.

AU - Gwoziecki, R.

AU - Coppard, R.

AU - Balestra, F.

AU - Chroboczek, J. A.

AU - Ghibaudo, G.

N1 - Funding Information: This study was partially supported by Grants-In-Aid for Scientific Research (Grant Nos. 17069004, 21241038, and 21750197) from the MECSST (Japan) and also by the French project PRINTRONICS.

PY - 2010/7/19

Y1 - 2010/7/19

N2 - The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10-7- 10-6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.

AB - The power spectral density of low-frequency noise in contact resistance, SRsd, of organic transistors is evaluated by the transfer-line method. The obtained gate-voltage dependent SRsd is then normalized by the square of contact resistance, which is extracted from dc current-voltage (I-V) measurements. After normalization, slightly variable and nearly constant SRsd/Rsd2 with respect to gate voltage are obtained in the range 10-7- 10-6 μm/Hz at 20 Hz in p-type and n-type devices, respectively. This method proves suitable to investigate separately the origin of the noise sources in channel as well as in contact region.

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Extraction of low-frequency noise in contact resistance of organic field-effect transistors

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