Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

S. Kamiyama; T. Maeda; Y. Nakamura; M. Iwaya; H. Amano; I. Akasaki; H. Kinoshita; T. Furusho; M. Yoshimoto; T. Kimoto; J. Suda; A. Henry; I. G. Ivanov; J. P. Bergman; B. Monemar; T. Onuma; S. F. Chichibu

doi:10.1063/1.2195883

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, S. F. Chichibu

IMRAM - Division of Measurements

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Abstract

High-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a full width at half maximum of 110 nm at 250 K. The high B concentration of more than 1018 cm-3 improves the emission efficiency of the DAP recombination at a high temperature. Compared with the photoluminescence spectrum of GaN at 10 K, a high quantum efficiency of 95% was estimated for the highly B-doped sample. From time-resolved photoluminescence measurements, a DAP recombination time of 5.0 ms was obtained, which is in good agreement with the calculated value by the rate equation with the assumption of a 95% internal quantum efficiency. This is quite promising as a light-emitting medium by optical pumping, as well as monolithic light sources combined with nitride-based light-emitting diodes grown on the DA-doped SiC epilayer.

Original language	English
Article number	093108
Journal	Journal of Applied Physics
Volume	99
Issue number	9
DOIs	https://doi.org/10.1063/1.2195883
Publication status	Published - 2006 May 1

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Kamiyama, S., Maeda, T., Nakamura, Y., Iwaya, M., Amano, H., Akasaki, I., Kinoshita, H., Furusho, T., Yoshimoto, M., Kimoto, T., Suda, J., Henry, A., Ivanov, I. G., Bergman, J. P., Monemar, B., Onuma, T., & Chichibu, S. F. (2006). Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC. Journal of Applied Physics, 99(9), Article 093108. https://doi.org/10.1063/1.2195883

@article{0aaf63e1e900407884db2ab57f8ef1f5,

title = "Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC",

abstract = "High-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a full width at half maximum of 110 nm at 250 K. The high B concentration of more than 1018 cm-3 improves the emission efficiency of the DAP recombination at a high temperature. Compared with the photoluminescence spectrum of GaN at 10 K, a high quantum efficiency of 95% was estimated for the highly B-doped sample. From time-resolved photoluminescence measurements, a DAP recombination time of 5.0 ms was obtained, which is in good agreement with the calculated value by the rate equation with the assumption of a 95% internal quantum efficiency. This is quite promising as a light-emitting medium by optical pumping, as well as monolithic light sources combined with nitride-based light-emitting diodes grown on the DA-doped SiC epilayer.",

author = "S. Kamiyama and T. Maeda and Y. Nakamura and M. Iwaya and H. Amano and I. Akasaki and H. Kinoshita and T. Furusho and M. Yoshimoto and T. Kimoto and J. Suda and A. Henry and Ivanov, {I. G.} and Bergman, {J. P.} and B. Monemar and T. Onuma and Chichibu, {S. F.}",

note = "Funding Information: This work is supported by the “Creation and Support Program of Startups from Universities,” from the Japan Science and Technology (JST) Agency. One of the authors (S.K.) would like to thank Dr. P. P. Paskov at Link{\"o}ping University, Sweden, for fruitful discussions.",

year = "2006",

month = may,

day = "1",

doi = "10.1063/1.2195883",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

Kamiyama, S, Maeda, T, Nakamura, Y, Iwaya, M, Amano, H, Akasaki, I, Kinoshita, H, Furusho, T, Yoshimoto, M, Kimoto, T, Suda, J, Henry, A, Ivanov, IG, Bergman, JP, Monemar, B, Onuma, T & Chichibu, SF 2006, 'Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC', Journal of Applied Physics, vol. 99, no. 9, 093108. https://doi.org/10.1063/1.2195883

TY - JOUR

T1 - Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

AU - Kamiyama, S.

AU - Maeda, T.

AU - Nakamura, Y.

AU - Iwaya, M.

AU - Amano, H.

AU - Akasaki, I.

AU - Kinoshita, H.

AU - Furusho, T.

AU - Yoshimoto, M.

AU - Kimoto, T.

AU - Suda, J.

AU - Henry, A.

AU - Ivanov, I. G.

AU - Bergman, J. P.

AU - Monemar, B.

AU - Onuma, T.

AU - Chichibu, S. F.

N1 - Funding Information: This work is supported by the “Creation and Support Program of Startups from Universities,” from the Japan Science and Technology (JST) Agency. One of the authors (S.K.) would like to thank Dr. P. P. Paskov at Linköping University, Sweden, for fruitful discussions.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - High-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a full width at half maximum of 110 nm at 250 K. The high B concentration of more than 1018 cm-3 improves the emission efficiency of the DAP recombination at a high temperature. Compared with the photoluminescence spectrum of GaN at 10 K, a high quantum efficiency of 95% was estimated for the highly B-doped sample. From time-resolved photoluminescence measurements, a DAP recombination time of 5.0 ms was obtained, which is in good agreement with the calculated value by the rate equation with the assumption of a 95% internal quantum efficiency. This is quite promising as a light-emitting medium by optical pumping, as well as monolithic light sources combined with nitride-based light-emitting diodes grown on the DA-doped SiC epilayer.

AB - High-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a full width at half maximum of 110 nm at 250 K. The high B concentration of more than 1018 cm-3 improves the emission efficiency of the DAP recombination at a high temperature. Compared with the photoluminescence spectrum of GaN at 10 K, a high quantum efficiency of 95% was estimated for the highly B-doped sample. From time-resolved photoluminescence measurements, a DAP recombination time of 5.0 ms was obtained, which is in good agreement with the calculated value by the rate equation with the assumption of a 95% internal quantum efficiency. This is quite promising as a light-emitting medium by optical pumping, as well as monolithic light sources combined with nitride-based light-emitting diodes grown on the DA-doped SiC epilayer.

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U2 - 10.1063/1.2195883

DO - 10.1063/1.2195883

M3 - Article

AN - SCOPUS:33646875784

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 093108

ER -

Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

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