TY - GEN
T1 - Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs
AU - Kurita, Yuki
AU - Kobayashi, Kengo
AU - Otsuji, Taiichi
AU - Ducournau, Guillaume
AU - Meziani, Yahya M.
AU - Popov, Vyacheslav V.
AU - Knap, Wojciech
PY - 2013
Y1 - 2013
N2 - We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.
AB - We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.
KW - detection
KW - high electron mobility transistor
KW - terahertz
KW - two-dimensional plasmon
UR - http://www.scopus.com/inward/record.url?scp=84882298968&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84882298968&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2013.6562642
DO - 10.1109/ICIPRM.2013.6562642
M3 - Conference contribution
AN - SCOPUS:84882298968
SN - 9781467361309
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2013 International Conference on Indium Phosphide and Related Materials, IPRM 2013
T2 - 2013 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013
Y2 - 19 May 2013 through 23 May 2013
ER -