Extremely Low Threshold Current Operation in 1.5-µm MQW-DFB Laser Diodes with Semi-Insulating InP Current Blocking Region

Tatsuya Sasaki; Hiroyuki Yamazaki; Naoya Henmi; Hirohito Yamada; Masayuki Yamaguchi; Mitsuhiro Kitamura; Ikuo Mito

doi:10.1109/50.59163

Extremely Low Threshold Current Operation in 1.5-µm MQW-DFB Laser Diodes with Semi-Insulating InP Current Blocking Region

Tatsuya Sasaki, Hiroyuki Yamazaki, Naoya Henmi, Hirohito Yamada, Masayuki Yamaguchi, Mitsuhiro Kitamura, Ikuo Mito

Research output: Contribution to journal › Article › peer-review

Abstract

Threshold current operation of 2.5 mA was achieved for 1.5-µm multiple-quantum-well distributed feedback (MQW-DFB) laser diodes (LD’s) with semi-insulating current blocking layers entirely grown by metal organic vapor phase epitaxy (MOVPE). Such low threshold current was attained by reduced leakage current and reduced mirror loss in the laser structure. The required bias current for achieving several gigahertz bandwidth was markedly reduced due to the enhanced differential gain and low threshold current. Due to the reduced lasing delay time in such low threshold LD's, up to 5-GHz zero-bias current modulation, with a clear eye opening, was successfully demonstrated.

Original language	English
Pages (from-to)	1343-1349
Number of pages	7
Journal	Journal of Lightwave Technology
Volume	8
Issue number	9
DOIs	https://doi.org/10.1109/50.59163
Publication status	Published - 1990 Sept
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/50.59163

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title = "Extremely Low Threshold Current Operation in 1.5-µm MQW-DFB Laser Diodes with Semi-Insulating InP Current Blocking Region",

abstract = "Threshold current operation of 2.5 mA was achieved for 1.5-µm multiple-quantum-well distributed feedback (MQW-DFB) laser diodes (LD{\textquoteright}s) with semi-insulating current blocking layers entirely grown by metal organic vapor phase epitaxy (MOVPE). Such low threshold current was attained by reduced leakage current and reduced mirror loss in the laser structure. The required bias current for achieving several gigahertz bandwidth was markedly reduced due to the enhanced differential gain and low threshold current. Due to the reduced lasing delay time in such low threshold LD's, up to 5-GHz zero-bias current modulation, with a clear eye opening, was successfully demonstrated.",

author = "Tatsuya Sasaki and Hiroyuki Yamazaki and Naoya Henmi and Hirohito Yamada and Masayuki Yamaguchi and Mitsuhiro Kitamura and Ikuo Mito",

year = "1990",

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doi = "10.1109/50.59163",

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pages = "1343--1349",

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T1 - Extremely Low Threshold Current Operation in 1.5-µm MQW-DFB Laser Diodes with Semi-Insulating InP Current Blocking Region

AU - Sasaki, Tatsuya

AU - Yamazaki, Hiroyuki

AU - Henmi, Naoya

AU - Yamada, Hirohito

AU - Yamaguchi, Masayuki

AU - Kitamura, Mitsuhiro

AU - Mito, Ikuo

PY - 1990/9

Y1 - 1990/9

N2 - Threshold current operation of 2.5 mA was achieved for 1.5-µm multiple-quantum-well distributed feedback (MQW-DFB) laser diodes (LD’s) with semi-insulating current blocking layers entirely grown by metal organic vapor phase epitaxy (MOVPE). Such low threshold current was attained by reduced leakage current and reduced mirror loss in the laser structure. The required bias current for achieving several gigahertz bandwidth was markedly reduced due to the enhanced differential gain and low threshold current. Due to the reduced lasing delay time in such low threshold LD's, up to 5-GHz zero-bias current modulation, with a clear eye opening, was successfully demonstrated.

AB - Threshold current operation of 2.5 mA was achieved for 1.5-µm multiple-quantum-well distributed feedback (MQW-DFB) laser diodes (LD’s) with semi-insulating current blocking layers entirely grown by metal organic vapor phase epitaxy (MOVPE). Such low threshold current was attained by reduced leakage current and reduced mirror loss in the laser structure. The required bias current for achieving several gigahertz bandwidth was markedly reduced due to the enhanced differential gain and low threshold current. Due to the reduced lasing delay time in such low threshold LD's, up to 5-GHz zero-bias current modulation, with a clear eye opening, was successfully demonstrated.

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Extremely Low Threshold Current Operation in 1.5-µm MQW-DFB Laser Diodes with Semi-Insulating InP Current Blocking Region

Abstract

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