TY - JOUR
T1 - Extrinsic spin hall effect in Cu1-xPtx
AU - Ramaswamy, Rajagopalan
AU - Wang, Yi
AU - Elyasi, Mehrdad
AU - Motapothula, M.
AU - Venkatesan, T.
AU - Qiu, Xuepeng
AU - Yang, Hyunsoo
N1 - Publisher Copyright:
© 2017 American Physical Society.
PY - 2017/8/31
Y1 - 2017/8/31
N2 - We experimentally study the effects on the spin Hall angle due to systematic addition of Pt into the light metal Cu. We perform spin-torque ferromagnetic resonance measurements on a Py/Cu1-xPtx bilayer and find that as the Pt concentration increases, the spin Hall angle of Cu1-xPtx increases. Moreover, only 28% Pt in Cu1-xPtx can give rise to a spin Hall angle close to that of Pt. We further extract the spin Hall resistivity of Cu1-xPtx for different Pt concentrations and find that the contribution of skew scattering is larger for lower Pt concentrations, while the side-jump contribution is larger for higher Pt concentrations. From a technological perspective, since Cu1-xPtx can sustain high processing temperatures, and Cu is the most common metallization element in the Si platform, it is easier to integrate the Cu1-xPtx-based spintronic devices into existing Si fabrication technology.
AB - We experimentally study the effects on the spin Hall angle due to systematic addition of Pt into the light metal Cu. We perform spin-torque ferromagnetic resonance measurements on a Py/Cu1-xPtx bilayer and find that as the Pt concentration increases, the spin Hall angle of Cu1-xPtx increases. Moreover, only 28% Pt in Cu1-xPtx can give rise to a spin Hall angle close to that of Pt. We further extract the spin Hall resistivity of Cu1-xPtx for different Pt concentrations and find that the contribution of skew scattering is larger for lower Pt concentrations, while the side-jump contribution is larger for higher Pt concentrations. From a technological perspective, since Cu1-xPtx can sustain high processing temperatures, and Cu is the most common metallization element in the Si platform, it is easier to integrate the Cu1-xPtx-based spintronic devices into existing Si fabrication technology.
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U2 - 10.1103/PhysRevApplied.8.024034
DO - 10.1103/PhysRevApplied.8.024034
M3 - Article
AN - SCOPUS:85028693965
SN - 2331-7019
VL - 8
JO - Physical Review Applied
JF - Physical Review Applied
IS - 2
M1 - 024034
ER -