Fabricating gratings on nitrides grown by MOVPE for DFB lasers

Masashi Nakao, Takeshi Kimura, Yuhuai Liu, Shi Yang Ji, Takashi Matsuoka

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1 Citation (Scopus)


In an achievement we believe marks a first, we succeeded in fabricating corrugation gratings in indium-nitride (InN) films grown by metal organic vapor phase epitaxy (MOVPE) for distributed feedback lasers. The resulting temperature-independent devices are suitable for wavelength demultiplexing and modulation in optical communications systems. The grating periods are in the first-order wavelength region of 1.55 μm. We also formed gratings in gallium nitride epitaxial layers, applying electron-beam (EB) lithography to form grating patterns in nitride substrates and inductively-coupled plasma reactive ion etching (ICP-RIE) to transfer EB resist patterns to nitrides. The depth of the grating grooves can be controlled by adjusting ICP-RIE etching times to attain suitable coupling coefficients for forward and backward propagating waves in DFB lasers. We also introduce UV imprinting, a new grating fabrication technique that offers significant promise.

Original languageEnglish
Pages (from-to)S893-S896
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue numberSUPPL. 2
Publication statusPublished - 2009 Jul


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