Fabrication and ab initio study of downscaled graphene nanoelectronic devices

Hiroshi Mizuta, Zakaria Moktadir, Stuart A. Boden, Nima Kalhor, Shuojin Hang, Marek E. Schmidt, Nguyen Tien Cuong, Dam Hieu Chi, Nobuo Otsuka, Muruagnathan Manoharan, Yoshishige Tsuchiya, Harold Chong, Harvey N. Rutt, Darren M. Bagnall

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)


In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.

Original languageEnglish
Title of host publicationCarbon Nanotubes, Graphene, and Associated Devices V
Publication statusPublished - 2012
EventCarbon Nanotubes, Graphene, and Associated Devices V - San Diego, CA, United States
Duration: 2012 Aug 142012 Aug 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceCarbon Nanotubes, Graphene, and Associated Devices V
Country/TerritoryUnited States
CitySan Diego, CA


  • Ab initio simulation
  • Disorder
  • Graphene
  • Helium ion microscope
  • Nanofabrication
  • Nanoribbon
  • Point defect
  • Quantum dot


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