Fabrication and characteristics of a Pt/MgxZn1-xO Schottky photodiode on a ZnO single crystal

H. Endo; M. Sugibuchi; K. Takahashi; S. Goto; K. Hane; Y. Kashiwaba

doi:10.1002/pssc.200779179

Fabrication and characteristics of a Pt/Mg_xZn_1-xO Schottky photodiode on a ZnO single crystal

H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, K. Hane, Y. Kashiwaba

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

The photoresponse of a Pt/Mg_xZn_1-xO Schottky photodiode using a (0001) ZnO single crystal substrate grown by the hydrothermal growth method is described in this report. Mg_xZn_1-xO thin films were prepared by a reactive RF magnetron sputtering method on the Zn-face of the ZnO single crystal substrate. The prepared Mg_xZn _1-xO thin films had a band gap of 4.1 eV. The fabricated Schottky photodiode had high responsivity of 0.034 A/W at the wavelength of 250 nm, and the responsivity ratio at wavelength of 250 nm and 550 nm was of the order of 4.

Original language	English
Pages (from-to)	3119-3121
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/pssc.200779179
Publication status	Published - 2008
Event	34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan Duration: 2007 Oct 15 → 2007 Oct 18

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200779179

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title = "Fabrication and characteristics of a Pt/MgxZn1-xO Schottky photodiode on a ZnO single crystal",

abstract = "The photoresponse of a Pt/MgxZn1-xO Schottky photodiode using a (0001) ZnO single crystal substrate grown by the hydrothermal growth method is described in this report. MgxZn1-xO thin films were prepared by a reactive RF magnetron sputtering method on the Zn-face of the ZnO single crystal substrate. The prepared MgxZn 1-xO thin films had a band gap of 4.1 eV. The fabricated Schottky photodiode had high responsivity of 0.034 A/W at the wavelength of 250 nm, and the responsivity ratio at wavelength of 250 nm and 550 nm was of the order of 4.",

author = "H. Endo and M. Sugibuchi and K. Takahashi and S. Goto and K. Hane and Y. Kashiwaba",

year = "2008",

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language = "English",

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journal = "Physica Status Solidi C: Conferences",

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T1 - Fabrication and characteristics of a Pt/MgxZn1-xO Schottky photodiode on a ZnO single crystal

AU - Endo, H.

AU - Sugibuchi, M.

AU - Takahashi, K.

AU - Goto, S.

AU - Hane, K.

AU - Kashiwaba, Y.

PY - 2008

Y1 - 2008

N2 - The photoresponse of a Pt/MgxZn1-xO Schottky photodiode using a (0001) ZnO single crystal substrate grown by the hydrothermal growth method is described in this report. MgxZn1-xO thin films were prepared by a reactive RF magnetron sputtering method on the Zn-face of the ZnO single crystal substrate. The prepared MgxZn 1-xO thin films had a band gap of 4.1 eV. The fabricated Schottky photodiode had high responsivity of 0.034 A/W at the wavelength of 250 nm, and the responsivity ratio at wavelength of 250 nm and 550 nm was of the order of 4.

AB - The photoresponse of a Pt/MgxZn1-xO Schottky photodiode using a (0001) ZnO single crystal substrate grown by the hydrothermal growth method is described in this report. MgxZn1-xO thin films were prepared by a reactive RF magnetron sputtering method on the Zn-face of the ZnO single crystal substrate. The prepared MgxZn 1-xO thin films had a band gap of 4.1 eV. The fabricated Schottky photodiode had high responsivity of 0.034 A/W at the wavelength of 250 nm, and the responsivity ratio at wavelength of 250 nm and 550 nm was of the order of 4.

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DO - 10.1002/pssc.200779179

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VL - 5

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JF - Physica Status Solidi C: Conferences

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Y2 - 15 October 2007 through 18 October 2007

ER -

Fabrication and characteristics of a Pt/Mg_xZn_1-xO Schottky photodiode on a ZnO single crystal

Abstract

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