Fabrication and characterization of 3D fin-channel MANOS type flash memory

Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al2O3 blocking layer (MANOS) have successfully been fabricated by scaling down Lg to 22 nm, and their electrical characteristics including variability of threshold voltage (Vt), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al2O3 blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO2 blocking layer.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
Publication statusPublished - 2015 Dec 4
Externally publishedYes
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 2014 Jun 82014 Jun 9

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014


OtherSilicon Nanoelectronics Workshop, SNW 2014
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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