Fabrication and characterization of 3D fin-channel MANOS type flash memory

Y. X. Liu; T. Nabatame; T. Matsukawa; K. Endo; S. O'Uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; W. Mizubayashi; Y. Morita; S. Migita; H. Ota; T. Chikyow; M. Masahara

doi:10.1109/SNW.2014.7348559

Fabrication and characterization of 3D fin-channel MANOS type flash memory

Y. X. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al₂O₃ blocking layer (MANOS) have successfully been fabricated by scaling down L_g to 22 nm, and their electrical characteristics including variability of threshold voltage (V_t), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al₂O₃ blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO₂ blocking layer.

Original language	English
Title of host publication	2014 Silicon Nanoelectronics Workshop, SNW 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479956777
DOIs	https://doi.org/10.1109/SNW.2014.7348559
Publication status	Published - 2015 Dec 4
Externally published	Yes
Event	Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States Duration: 2014 Jun 8 → 2014 Jun 9

Publication series

Name	2014 Silicon Nanoelectronics Workshop, SNW 2014

Other

Other	Silicon Nanoelectronics Workshop, SNW 2014
Country/Territory	United States
City	Honolulu
Period	14/6/8 → 14/6/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SNW.2014.7348559

Cite this

Liu, Y. X., Nabatame, T., Matsukawa, T., Endo, K., O'Uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Chikyow, T., & Masahara, M. (2015). Fabrication and characterization of 3D fin-channel MANOS type flash memory. In 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348559] (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348559

Fabrication and characterization of 3D fin-channel MANOS type flash memory. / Liu, Y. X.; Nabatame, T.; Matsukawa, T. et al.
2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348559 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, YX, Nabatame, T, Matsukawa, T, Endo, K, O'Uchi, S, Tsukada, J, Yamauchi, H, Ishikawa, Y, Mizubayashi, W, Morita, Y, Migita, S, Ota, H, Chikyow, T & Masahara, M 2015, Fabrication and characterization of 3D fin-channel MANOS type flash memory. in 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348559, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 14/6/8. https://doi.org/10.1109/SNW.2014.7348559

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title = "Fabrication and characterization of 3D fin-channel MANOS type flash memory",

abstract = "The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al2O3 blocking layer (MANOS) have successfully been fabricated by scaling down Lg to 22 nm, and their electrical characteristics including variability of threshold voltage (Vt), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al2O3 blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO2 blocking layer.",

author = "Liu, {Y. X.} and T. Nabatame and T. Matsukawa and K. Endo and S. O'Uchi and J. Tsukada and H. Yamauchi and Y. Ishikawa and W. Mizubayashi and Y. Morita and S. Migita and H. Ota and T. Chikyow and M. Masahara",

note = "Funding Information: This work was supported in part by the Nanotechnology Project of NEDO Japan. Publisher Copyright: {\textcopyright} 2014 IEEE.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",

year = "2015",

month = dec,

day = "4",

doi = "10.1109/SNW.2014.7348559",

language = "English",

series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",

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AU - Liu, Y. X.

AU - Nabatame, T.

AU - Matsukawa, T.

AU - Endo, K.

AU - O'Uchi, S.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Ishikawa, Y.

AU - Mizubayashi, W.

AU - Morita, Y.

AU - Migita, S.

AU - Ota, H.

AU - Chikyow, T.

AU - Masahara, M.

PY - 2015/12/4

Y1 - 2015/12/4

N2 - The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al2O3 blocking layer (MANOS) have successfully been fabricated by scaling down Lg to 22 nm, and their electrical characteristics including variability of threshold voltage (Vt), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al2O3 blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO2 blocking layer.

AB - The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al2O3 blocking layer (MANOS) have successfully been fabricated by scaling down Lg to 22 nm, and their electrical characteristics including variability of threshold voltage (Vt), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al2O3 blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO2 blocking layer.

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Fabrication and characterization of 3D fin-channel MANOS type flash memory

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